Inventor
MAKI YASUHIKO
JP16 patents
⚠️ This page may combine multiple inventors who share the name “MAKI YASUHIKO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU LTD
15 patentsUS4757474AJul 12, 1988
Semiconductor memory device having redundancy circuit portion
FUJITSU LTD180 citations98
US7447058B2Nov 4, 2008
Write margin of SRAM cells improved by controlling power supply voltages to the inverters via corresponding bit lines
FUJITSU LTD27 citations87
US6870777B2Mar 22, 2005
Semiconductor memory device having self-timing circuit
FUJITSU LTD16 citations83
US7411813B2Aug 12, 2008
Semiconductor device
FUJITSU LTD8 citations73
US5477178ADec 19, 1995
Data-hold timing adjustment circuit
FUJITSU LTD14 citations73
US4906868AMar 6, 1990
Logic circuit using bipolar complementary metal oxide semiconductor gate and semiconductor memory device having the logic circuit
FUJITSU LTD10 citations73
US4961170AOct 2, 1990
Logic circuit using bipolar complementary metal oxide semiconductor gate and semiconductor memory device having the logic circuit
FUJITSU LTD7 citations68
US7421364B2Sep 2, 2008
Integrated circuit device having a test circuit to measure AC characteristics of internal memory macro
FUJITSU LTD3 citations62
US6809404B2Oct 26, 2004
Semiconductor device
FUJITSU LTD4 citations62
US6501694B2Dec 31, 2002
Precharge circuit with small width
FUJITSU LTD2 citations62
US5301148AApr 5, 1994
Semiconductor memory device with bipolar-FET sense amp
FUJITSU LTD4 citations62
US7457182B2Nov 25, 2008
Semiconductor memory including self-timing circuit
FUJITSU LTD5 citations60
US6081444AJun 27, 2000
Static memory adopting layout that enables minimization of cell area
FUJITSU LTD5 citations60
US6239647B1May 29, 2001
Decoder circuit and decoding method of the same
FUJITSU LTD0 citations44
US7327599B2Feb 5, 2008
Semiconductor memory device
FUJITSU LTD0 citations41