Inventor

WANG HAIHONG

US97 patents

⚠️ This page may combine multiple inventors who share the name “WANG HAIHONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WANG HAIHONG

ADVANCED MICRO DEVICES INC

Narrow fin FinFET

Strained channel FinFET

Semiconductor device having a U-shaped gate structure

Strained channel finfet

FinFET device incorporating strained silicon in the channel region

Method for forming a gate in a FinFET device and thinning a fin in a channel region of the FinFET device

FinFET device with multiple fin structures

Double spacer FinFET formation

Method for forming multiple structures in a semiconductor device

Strained silicon PMOS having silicon germanium source/drain extensions and method for its fabrication

Damascene gate process with sacrificial oxide in semiconductor devices

Shallow trench isolation (STI) region with high-K liner and method of formation

Strained silicon MOSFET having silicon source/drain regions and method for its fabrication

Method for forming fins in a FinFET device using sacrificial carbon layer

Double gate semiconductor device having separate gates

MOSFETs with differing gate dielectrics and method of formation

Reversed T-shaped FinFET

Semiconductor device having a thick strained silicon layer and method of its formation

Multi-step chemical mechanical polishing of a gate area in a FinFET

Systems and methods for forming dense n-channel and p-channel fins using shadow implanting

Method for forming a fin in a finFET device

Mosfets incorporating nickel germanosilicided gate and methods for their formation

Narrow fin FinFET

Uniformly doped source/drain junction in a double-gate MOSFET

Asymmetric semiconductor device having dual work function gate and method of fabrication

Method of fabricating transistor having a single crystalline gate conductor

Semiconductor device having multi-work function gate electrode and multi-segment gate dielectric

Germanium MOSFET devices and methods for making same

Isolated FinFET P-channel/N-channel transistor pair

Damascene finfet gate with selective metal interdiffusion

Narrow fins by oxidation in double-gate finfet

Method using planarizing gate material to improve gate critical dimension in semiconductor devices

Germanium MOSFET devices and methods for making same

Tri-gate and gate around MOSFET devices and methods for making same

Double gate semiconductor device having a metal gate

Method for doping structures in FinFET devices

Narrow-body damascene tri-gate FinFET

Strained silicon MOSFET having improved source/drain extension dopant diffusion resistance and method for its fabrication

Narrow body raised source/drain metal gate MOSFET

Self aligned damascene gate

Semiconductor with tensile strained substrate and method of making the same

Damascene gate semiconductor processing with local thinning of channel region

Non-volatile memory device

Selective silicidation of gates in semiconductor devices to achieve multiple threshold voltages

Strained silicon MOSFET having reduced leakage and method of its formation

Semiconductor device having a thin fin and raised source/drain areas

System and method for forming stacked fin structure using metal-induced-crystallization

Additional gate control for a double-gate MOSFET

Method for forming structures in finfet devices

SPANSION LLC

Flash memory device