Inventor

POWELL ADRIAN

US21 patents

⚠️ This page may combine multiple inventors who share the name “POWELL ADRIAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

POWELL ADRIAN

CREE INC

One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer

Three inch silicon carbide wafer with low warp, bow, and TTV

Low 1c screw dislocation 3 inch silicon carbide wafer

One hundred millimeter single crystal silicon carbide wafer

Seeded single crystal silicon carbide growth and resulting crystals

Low micropipe 100 mm silicon carbide wafer

Low basal plane dislocation bulk grown SiC wafers

Seed and seedholder combinations for high quality growth of large silicon carbide single crystals

Low 1C screw dislocation 3 inch silicon carbide wafer

Low 1C screw dislocation 3 inch silicon carbide wafer

Low micropipe 100 mm silicon carbide wafer

Process for producing high quality large size silicon carbide crystals

Reduction of subsurface damage in the production of bulk SiC crystals

Seed and seedholder combinations for high quality growth of large silicon carbide single crystals

Stabilized, high-doped silicon carbide

LEONARD ROBERT TYLER

Method of producing high quality silicon carbide crystal in a seeded growth system

Producing high quality bulk silicon carbide single crystal by managing thermal stresses at a seed interface

JENNY JASON RONALD

One hundred millimeter single crystal silicon carbide wafer

LEONARD ROBERT T

One hundred millimeter SiC crystal grown on off-axis seed

POWELL ADRIAN

Low micropipe 100 mm silicon carbide wafer

WOLFSPEED INC

Stabilized, high-doped silicon carbide