Inventor
SALI MAURO
IT20 patents
⚠️ This page may combine multiple inventors who share the name “SALI MAURO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS SRL
11 patentsUS6442068B1Aug 27, 2002
Non-volatile memory with functional capability of burst mode read and page mode read during suspension of an operation of electrical alteration
ST MICROELECTRONICS SRL68 citations96
US6912598B1Jun 28, 2005
Non-volatile memory with functional capability of simultaneous modification of the content and burst mode read or page mode read
ST MICROELECTRONICS SRL35 citations92
US6480436B2Nov 12, 2002
Non-volatile memory with a charge pump with regulated voltage
ST MICROELECTRONICS SRL30 citations92
US6385107B1May 7, 2002
Architecture for handling internal voltages in a non-volatile memory, particularly in a single-voltage supply type of dual-work flash memory
ST MICROELECTRONICS SRL49 citations92
US5999456ADec 7, 1999
Flash EEPROM with controlled discharge time of the word lines and source potentials after erase
ST MICROELECTRONICS SRL35 citations92
US6950337B2Sep 27, 2005
Nonvolatile memory device with simultaneous read/write
ST MICROELECTRONICS SRL22 citations90
US6854040B1Feb 8, 2005
Non-volatile memory device with burst mode reading and corresponding reading method
ST MICROELECTRONICS SRL9 citations73
US5920505AJul 6, 1999
Negative word line voltage regulation circuit for electrically erasable semiconductor memory devices
ST MICROELECTRONICS SRL12 citations73
US6349059B1Feb 19, 2002
Method for reading data from a non-volatile memory device with autodetect burst mode reading and corresponding reading circuit
ST MICROELECTRONICS SRL13 citations72
US6339551B1Jan 15, 2002
Semiconductor device with selectable pads
ST MICROELECTRONICS SRL4 citations62
US6903995B2Jun 7, 2005
Test structure for the measurement of contact to gate distance in non-volatile memory devices and corresponding test method
ST MICROELECTRONICS SRL1 citations51
SGS THOMSON MICROELECTRONICS
8 patentsUS5784314AJul 21, 1998
Method for setting the threshold voltage of a reference memory cell
SGS THOMSON MICROELECTRONICS94 citations97
US5781474AJul 14, 1998
Parallel programming method of memory words and corresponding circuit
SGS THOMSON MICROELECTRONICS19 citations92
US5719807AFeb 17, 1998
Flash EEPROM with controlled discharge time of the word lines and source potentials after erase
SGS THOMSON MICROELECTRONICS21 citations92
US6137725AOct 24, 2000
Row decoding circuit for a semiconductor non-volatile electrically programmable memory and corresponding method
SGS THOMSON MICROELECTRONICS33 citations91
US5848013ADec 8, 1998
Row decoding circuit for semiconductor non-volatile electrically programmable memory and corresponding method
SGS THOMSON MICROELECTRONICS19 citations91
US5659502AAug 19, 1997
Negative word line voltage regulation circuit for electrically erasable semiconductor memory devices
SGS THOMSON MICROELECTRONICS13 citations73
US6320792B1Nov 20, 2001
Row decoding circuit for a semiconductor non-volatile electrically programmable memory and corresponding method
SGS THOMSON MICROELECTRONICS9 citations72
US5724290AMar 3, 1998
Method and programming device for detecting an error in a memory
SGS THOMSON MICROELECTRONICS0 citations51