Inventor

KUTSUNAI TOSHIE

JP21 patents

⚠️ This page may combine multiple inventors who share the name “KUTSUNAI TOSHIE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KUTSUNAI TOSHIE

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

Semiconductor device with oxygen diffusion barrier layer termed from composite nitride

Semiconductor memory with hydrogen barrier

Method of fabricating semiconductor device with capacitor covered by a TEOS-03 film

Semiconductor device and method for fabricating the same

Semiconductor device and method and system for fabricating the same

Memory device with hydrogen-blocked ferroelectric capacitor

Semiconductor device and method for fabricating the same

Semiconductor device with an oxygen diffusion barrier layer formed from a composite nitride

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

Method for fabricating ferroelectric memory device and method for fabricating the same

Ferroelectric memory device and method for fabricating the same

Semiconductor device and method for fabricating the same

MATSUSHITA ELECTRONICS CORP

Semiconductor capacitive device having improved anti-diffusion properties and a method of making the same

Semiconductor device and method for fabricating the same

ITOU SATORU

Semiconductor device

Semiconductor device

PANASONIC CORP

Semiconductor memory device and method for fabricating the same

Semiconductor device and method for fabricating the same