Inventor
FUKUNAGA TOSHIAKI
JP57 patents
⚠️ This page may combine multiple inventors who share the name “FUKUNAGA TOSHIAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJI PHOTO FILM CO LTD
39 patentsUS6693941B1Feb 17, 2004
Semiconductor laser apparatus
FUJI PHOTO FILM CO LTD34 citations93
US6456638B1Sep 24, 2002
High-power short-wavelength semiconductor light emitting device having active layer with increased indium content
FUJI PHOTO FILM CO LTD43 citations93
US6396863B1May 28, 2002
High-power semiconductor laser device having index-guided structure with InAlGaP current confinement layer
FUJI PHOTO FILM CO LTD23 citations93
US6344367B1Feb 5, 2002
Method of fabricating a diffraction grating
FUJI PHOTO FILM CO LTD34 citations93
US5657339AAug 12, 1997
Integrated optics semiconductor laser device
FUJI PHOTO FILM CO LTD36 citations93
US5602866AFeb 11, 1997
Semiconductor laser
FUJI PHOTO FILM CO LTD32 citations93
US6709513B2Mar 23, 2004
Substrate including wide low-defect region for use in semiconductor element
FUJI PHOTO FILM CO LTD19 citations92
US6127691AOct 3, 2000
Semiconductor laser device
FUJI PHOTO FILM CO LTD41 citations92
US6028874AFeb 22, 2000
Semiconductor laser
FUJI PHOTO FILM CO LTD26 citations92
US5995528ANov 30, 1999
Semiconductor laser
FUJI PHOTO FILM CO LTD38 citations92
US6744797B2Jun 1, 2004
Semiconductor laser device
FUJI PHOTO FILM CO LTD17 citations84
US6580738B2Jun 17, 2003
High-power semiconductor laser device in which near-edge portions of active layer are removed
FUJI PHOTO FILM CO LTD16 citations84
US6535536B2Mar 18, 2003
Semiconductor laser element
FUJI PHOTO FILM CO LTD13 citations84
US6516016B1Feb 4, 2003
High-power semiconductor laser device having current confinement structure and index-guided structure, and oscillating in transverse mode
FUJI PHOTO FILM CO LTD19 citations84
US6195373B1Feb 27, 2001
Index optical waveguide semiconductor laser
FUJI PHOTO FILM CO LTD17 citations84
US6999486B2Feb 14, 2006
Semiconductor laser element and semiconductor laser
FUJI PHOTO FILM CO LTD9 citations74
US6876688B1Apr 5, 2005
Semiconductor laser and method of manufacturing the same
FUJI PHOTO FILM CO LTD11 citations74
US6822988B1Nov 23, 2004
Laser apparatus in which GaN-based compound surface-emitting semiconductor element is excited with GaN-based compound semiconductor laser element
FUJI PHOTO FILM CO LTD10 citations74
US6778573B2Aug 17, 2004
Fundamental-transverse-mode index-guided semiconductor laser device having upper optical waveguide layer thinner than lower optical waveguide layer
FUJI PHOTO FILM CO LTD7 citations74
US6774021B2Aug 10, 2004
Pattern forming method and pattern forming device
FUJI PHOTO FILM CO LTD10 citations74
US6738403B2May 18, 2004
Semiconductor laser element and semiconductor laser
FUJI PHOTO FILM CO LTD10 citations74
US6625190B1Sep 23, 2003
Semiconductor laser device having thickened impurity-doped aluminum-free optical waveguide layers
FUJI PHOTO FILM CO LTD8 citations74
US6621845B2Sep 16, 2003
Semiconductor laser device which includes AlGaAs optical waveguide layer being formed over internal stripe groove and having controlled refractive index
FUJI PHOTO FILM CO LTD8 citations74
US6452954B2Sep 17, 2002
High-power semiconductor laser device having current confinement structure and index-guided structure and oscillating in transverse mode
FUJI PHOTO FILM CO LTD10 citations74
US6400743B1Jun 4, 2002
High-power semiconductor laser device having current confinement structure and index-guided structure
FUJI PHOTO FILM CO LTD13 citations74
US6285695B1Sep 4, 2001
Semiconductor laser
FUJI PHOTO FILM CO LTD14 citations74
US5617437AApr 1, 1997
Semiconductor laser
FUJI PHOTO FILM CO LTD13 citations74
US6856636B2Feb 15, 2005
Semiconductor laser device
FUJI PHOTO FILM CO LTD7 citations72
US6973109B2Dec 6, 2005
Semiconductor laser device having strain buffer layer between compressive-strain quantum well layer and tensile-strain barrier layer
FUJI PHOTO FILM CO LTD5 citations63
US6816524B2Nov 9, 2004
InGaAsP or InGaAs semiconductor laser element in which near-edge portion of active layer is substituted with GaAs optical waveguide layer having greater bandgap than active layer
FUJI PHOTO FILM CO LTD2 citations63
US6690698B2Feb 10, 2004
Semiconductor laser device including arrow structure precisely formed to suppress P-As interdiffusion and Al oxidation
FUJI PHOTO FILM CO LTD2 citations63
US6643306B2Nov 4, 2003
Semiconductor laser device in which compressive strain active layer is sandwiched between tensile strain optical waveguide layers and average strain is limited
FUJI PHOTO FILM CO LTD3 citations63
US6600770B2Jul 29, 2003
High-power semiconductor laser device having current confinement structure and index-guided structure and stably oscillating in single mode
FUJI PHOTO FILM CO LTD2 citations63
US6546033B2Apr 8, 2003
InGaAsP semiconductor laser device in which near-edge portions are filled with non-absorbent layer, and lower optical waveguide layer includes InGaP intermediate layer
FUJI PHOTO FILM CO LTD6 citations63
US6014388AJan 11, 2000
Short wavelength laser
FUJI PHOTO FILM CO LTD6 citations63
US6888866B2May 3, 2005
Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof
FUJI PHOTO FILM CO LTD3 citations62
US6797416B2Sep 28, 2004
GaN substrate formed under controlled growth condition over GaN layer having discretely formed pits
FUJI PHOTO FILM CO LTD4 citations62
US6560261B2May 6, 2003
Semiconductor laser device having InGaAs compressive-strain active layer, GaAsP tensile-strain barrier layers, and InGaP optical waveguide layers
FUJI PHOTO FILM CO LTD5 citations61
US6873637B2Mar 29, 2005
Semiconductor laser element including optical waveguide layers which have gradually varying bandgaps so as to reduce electrical resistance at interfaces
FUJI PHOTO FILM CO LTD4 citations57
FUJIFILM CORP
8 patentsUS7476904B2Jan 13, 2009
Photoelectric converting film stack type solid-state image pickup device
FUJIFILM CORP31 citations93
US7768088B2Aug 3, 2010
Solid-state imaging device that efficiently guides light to a light-receiving part
FUJIFILM CORP14 citations84
US7586528B2Sep 8, 2009
Color sensor and color image pickup method
FUJIFILM CORP12 citations84
US7579665B2Aug 25, 2009
Color light receiving device and image pickup device
FUJIFILM CORP12 citations84
US7582943B2Sep 1, 2009
Color light receiving device and image pickup device
FUJIFILM CORP7 citations74
US7296879B2Nov 20, 2007
Liquid ejection head and method of producing the same
FUJIFILM CORP4 citations63
US7205097B2Apr 17, 2007
Liquid ejection head and method of producing the same
FUJIFILM CORP5 citations62
US7735750B2Jun 15, 2010
Liquid ejection head
FUJIFILM CORP1 citations52
FUKUNAGA TOSHIAKI
2 patentsOKI ELECTRIC IND CO LTD
1 patentShowing the top 50 of 57 patents by PatentIndex Score.