P

Inventor

FUKUNAGA TOSHIAKI

JP57 patents
⚠️ This page may combine multiple inventors who share the name “FUKUNAGA TOSHIAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FUJI PHOTO FILM CO LTD

39 patents
US6693941B1Feb 17, 2004

Semiconductor laser apparatus

FUJI PHOTO FILM CO LTD34 citations93
US6456638B1Sep 24, 2002

High-power short-wavelength semiconductor light emitting device having active layer with increased indium content

FUJI PHOTO FILM CO LTD43 citations93
US6396863B1May 28, 2002

High-power semiconductor laser device having index-guided structure with InAlGaP current confinement layer

FUJI PHOTO FILM CO LTD23 citations93
US6344367B1Feb 5, 2002

Method of fabricating a diffraction grating

FUJI PHOTO FILM CO LTD34 citations93
US5657339AAug 12, 1997

Integrated optics semiconductor laser device

FUJI PHOTO FILM CO LTD36 citations93
US5602866AFeb 11, 1997

Semiconductor laser

FUJI PHOTO FILM CO LTD32 citations93
US6709513B2Mar 23, 2004

Substrate including wide low-defect region for use in semiconductor element

FUJI PHOTO FILM CO LTD19 citations92
US6127691AOct 3, 2000

Semiconductor laser device

FUJI PHOTO FILM CO LTD41 citations92
US6028874AFeb 22, 2000

Semiconductor laser

FUJI PHOTO FILM CO LTD26 citations92
US5995528ANov 30, 1999

Semiconductor laser

FUJI PHOTO FILM CO LTD38 citations92
US6744797B2Jun 1, 2004

Semiconductor laser device

FUJI PHOTO FILM CO LTD17 citations84
US6580738B2Jun 17, 2003

High-power semiconductor laser device in which near-edge portions of active layer are removed

FUJI PHOTO FILM CO LTD16 citations84
US6535536B2Mar 18, 2003

Semiconductor laser element

FUJI PHOTO FILM CO LTD13 citations84
US6516016B1Feb 4, 2003

High-power semiconductor laser device having current confinement structure and index-guided structure, and oscillating in transverse mode

FUJI PHOTO FILM CO LTD19 citations84
US6195373B1Feb 27, 2001

Index optical waveguide semiconductor laser

FUJI PHOTO FILM CO LTD17 citations84
US6999486B2Feb 14, 2006

Semiconductor laser element and semiconductor laser

FUJI PHOTO FILM CO LTD9 citations74
US6876688B1Apr 5, 2005

Semiconductor laser and method of manufacturing the same

FUJI PHOTO FILM CO LTD11 citations74
US6822988B1Nov 23, 2004

Laser apparatus in which GaN-based compound surface-emitting semiconductor element is excited with GaN-based compound semiconductor laser element

FUJI PHOTO FILM CO LTD10 citations74
US6778573B2Aug 17, 2004

Fundamental-transverse-mode index-guided semiconductor laser device having upper optical waveguide layer thinner than lower optical waveguide layer

FUJI PHOTO FILM CO LTD7 citations74
US6774021B2Aug 10, 2004

Pattern forming method and pattern forming device

FUJI PHOTO FILM CO LTD10 citations74
US6738403B2May 18, 2004

Semiconductor laser element and semiconductor laser

FUJI PHOTO FILM CO LTD10 citations74
US6625190B1Sep 23, 2003

Semiconductor laser device having thickened impurity-doped aluminum-free optical waveguide layers

FUJI PHOTO FILM CO LTD8 citations74
US6621845B2Sep 16, 2003

Semiconductor laser device which includes AlGaAs optical waveguide layer being formed over internal stripe groove and having controlled refractive index

FUJI PHOTO FILM CO LTD8 citations74
US6452954B2Sep 17, 2002

High-power semiconductor laser device having current confinement structure and index-guided structure and oscillating in transverse mode

FUJI PHOTO FILM CO LTD10 citations74
US6400743B1Jun 4, 2002

High-power semiconductor laser device having current confinement structure and index-guided structure

FUJI PHOTO FILM CO LTD13 citations74
US6285695B1Sep 4, 2001

Semiconductor laser

FUJI PHOTO FILM CO LTD14 citations74
US5617437AApr 1, 1997

Semiconductor laser

FUJI PHOTO FILM CO LTD13 citations74
US6856636B2Feb 15, 2005

Semiconductor laser device

FUJI PHOTO FILM CO LTD7 citations72
US6973109B2Dec 6, 2005

Semiconductor laser device having strain buffer layer between compressive-strain quantum well layer and tensile-strain barrier layer

FUJI PHOTO FILM CO LTD5 citations63
US6816524B2Nov 9, 2004

InGaAsP or InGaAs semiconductor laser element in which near-edge portion of active layer is substituted with GaAs optical waveguide layer having greater bandgap than active layer

FUJI PHOTO FILM CO LTD2 citations63
US6690698B2Feb 10, 2004

Semiconductor laser device including arrow structure precisely formed to suppress P-As interdiffusion and Al oxidation

FUJI PHOTO FILM CO LTD2 citations63
US6643306B2Nov 4, 2003

Semiconductor laser device in which compressive strain active layer is sandwiched between tensile strain optical waveguide layers and average strain is limited

FUJI PHOTO FILM CO LTD3 citations63
US6600770B2Jul 29, 2003

High-power semiconductor laser device having current confinement structure and index-guided structure and stably oscillating in single mode

FUJI PHOTO FILM CO LTD2 citations63
US6546033B2Apr 8, 2003

InGaAsP semiconductor laser device in which near-edge portions are filled with non-absorbent layer, and lower optical waveguide layer includes InGaP intermediate layer

FUJI PHOTO FILM CO LTD6 citations63
US6014388AJan 11, 2000

Short wavelength laser

FUJI PHOTO FILM CO LTD6 citations63
US6888866B2May 3, 2005

Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof

FUJI PHOTO FILM CO LTD3 citations62
US6797416B2Sep 28, 2004

GaN substrate formed under controlled growth condition over GaN layer having discretely formed pits

FUJI PHOTO FILM CO LTD4 citations62
US6560261B2May 6, 2003

Semiconductor laser device having InGaAs compressive-strain active layer, GaAsP tensile-strain barrier layers, and InGaP optical waveguide layers

FUJI PHOTO FILM CO LTD5 citations61
US6873637B2Mar 29, 2005

Semiconductor laser element including optical waveguide layers which have gradually varying bandgaps so as to reduce electrical resistance at interfaces

FUJI PHOTO FILM CO LTD4 citations57

FUJIFILM CORP

8 patents

FUKUNAGA TOSHIAKI

2 patents

OKI ELECTRIC IND CO LTD

1 patent

Showing the top 50 of 57 patents by PatentIndex Score.