Inventor
HAN JIN-MAN
US69 patents
⚠️ This page may combine multiple inventors who share the name “HAN JIN-MAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
23 patentsUS7372715B2May 13, 2008
Architecture and method for NAND flash memory
MICRON TECHNOLOGY INC438 citations99
US7447847B2Nov 4, 2008
Memory device trims
MICRON TECHNOLOGY INC58 citations98
US7345924B2Mar 18, 2008
Programming memory devices
MICRON TECHNOLOGY INC59 citations98
US7269066B2Sep 11, 2007
Programming memory devices
MICRON TECHNOLOGY INC59 citations98
US7196930B2Mar 27, 2007
Flash memory programming to reduce program disturb
MICRON TECHNOLOGY INC43 citations96
US7949821B2May 24, 2011
Method of storing data on a flash memory device
MICRON TECHNOLOGY INC17 citations93
US7778086B2Aug 17, 2010
Erase operation control sequencing apparatus, systems, and methods
MICRON TECHNOLOGY INC32 citations93
US7719888B2May 18, 2010
Memory device having a negatively ramping dynamic pass voltage for reducing read-disturb effect
MICRON TECHNOLOGY INC19 citations93
US7656740B2Feb 2, 2010
Wordline voltage transfer apparatus, systems, and methods
MICRON TECHNOLOGY INC14 citations93
US7558131B2Jul 7, 2009
NAND system with a data write frequency greater than a command-and-address-load frequency
MICRON TECHNOLOGY INC17 citations93
US7518914B2Apr 14, 2009
Non-volatile memory device with both single and multiple level cells
MICRON TECHNOLOGY INC22 citations93
US7505323B2Mar 17, 2009
Programming memory devices
MICRON TECHNOLOGY INC12 citations93
US7123521B1Oct 17, 2006
Random cache read
MICRON TECHNOLOGY INC31 citations91
US9230658B2Jan 5, 2016
Method of storing data on a flash memory device
MICRON TECHNOLOGY INC6 citations84
US7630236B2Dec 8, 2009
Flash memory programming to reduce program disturb
MICRON TECHNOLOGY INC12 citations84
US7542336B2Jun 2, 2009
Architecture and method for NAND flash memory
MICRON TECHNOLOGY INC13 citations84
US7369447B2May 6, 2008
Random cache read
MICRON TECHNOLOGY INC11 citations83
US7688630B2Mar 30, 2010
Programming memory devices
MICRON TECHNOLOGY INC3 citations74
US7548459B2Jun 16, 2009
Method, apparatus, and system providing adjustable memory page configuration
MICRON TECHNOLOGY INC5 citations74
US7400549B2Jul 15, 2008
Memory block reallocation in a flash memory device
MICRON TECHNOLOGY INC8 citations74
US8379448B2Feb 19, 2013
Memory with interleaved read and redundant columns
MICRON TECHNOLOGY INC2 citations63
US7855927B2Dec 21, 2010
NAND system with a data write frequency greater than a command-and-address-load frequency
MICRON TECHNOLOGY INC2 citations63
US7821830B2Oct 26, 2010
Flash memory device with redundant columns
MICRON TECHNOLOGY INC3 citations63
SAMSUNG ELECTRONICS CO LTD
8 patentsUS5812466ASep 22, 1998
Column redundancy circuit for a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD37 citations93
US5936896AAug 10, 1999
High speed and low power signal line driver and semiconductor memory device using the same
SAMSUNG ELECTRONICS CO LTD47 citations91
US10061647B2Aug 28, 2018
Nonvolatile memory devices, methods of operating the same and solid state drives including the same
SAMSUNG ELECTRONICS CO LTD7 citations83
US5650977AJul 22, 1997
Integrated circuit memory device including banks of memory cells and related methods
SAMSUNG ELECTRONICS CO LTD14 citations74
US5367491ANov 22, 1994
Apparatus for automatically initiating a stress mode of a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD18 citations74
US5959924ASep 28, 1999
Method and circuit for controlling an isolation gate in a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD9 citations73
US5844857ADec 1, 1998
Row address control circuits having a predecoding address sampling pulse generator and methods for memory devices
SAMSUNG ELECTRONICS CO LTD12 citations73
US5262989ANov 16, 1993
Circuit for sensing back-bias level in a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD14 citations71
HAN JIN-MAN
7 patentsUS8120952B2Feb 21, 2012
Memory device with a decreasing dynamic pass voltage for reducing read-disturb effect
HAN JIN-MAN18 citations92
US8230165B2Jul 24, 2012
Method of storing data on a flash memory device
HAN JIN-MAN8 citations84
US8072816B2Dec 6, 2011
Memory block reallocation in a flash memory device
HAN JIN-MAN5 citations74
US8064258B2Nov 22, 2011
Method apparatus, and system providing adjustable memory page configuration
HAN JIN-MAN6 citations74
US8595423B2Nov 26, 2013
Method of storing data on a flash memory device
HAN JIN-MAN3 citations63
US8179721B2May 15, 2012
Non-volatile memory device with both single and multiple level cells
HAN JIN-MAN1 citations63
US8081511B2Dec 20, 2011
Flash memory device with redundant columns
HAN JIN-MAN1 citations63
T RAM INC
5 patentsUS6611452B1Aug 26, 2003
Reference cells for TCCT based memory cells
T RAM INC62 citations96
US6903987B2Jun 7, 2005
Single data line sensing scheme for TCCT-based memory cells
T RAM INC23 citations93
US6778435B1Aug 17, 2004
Memory architecture for TCCT-based memory cells
T RAM INC33 citations92
US6845037B1Jan 18, 2005
Reference cells for TCCT based memory cells
T RAM INC12 citations84
US7006398B1Feb 28, 2006
Single data line sensing scheme for TCCT-based memory cells
T RAM INC8 citations74
SAMSUNG ELECTRO MECH
2 patentsT RAM SEMICONDUCTOR INC
1 patentSILICON MAGIC CORP
1 patentSHIM SUNIL
1 patentKIM MIN SEOK
1 patentROUND ROCK RES LLC
1 patentShowing the top 50 of 69 patents by PatentIndex Score.