P

Inventor

SWIFT CRAIG T

US45 patents
⚠️ This page may combine multiple inventors who share the name “SWIFT CRAIG T”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FREESCALE SEMICONDUCTOR INC

37 patents
US6887758B2May 3, 2005

Non-volatile memory device and method for forming

FREESCALE SEMICONDUCTOR INC70 citations98
US6791883B2Sep 14, 2004

Program and erase in a thin film storage non-volatile memory

FREESCALE SEMICONDUCTOR INC66 citations96
US7544980B2Jun 9, 2009

Split gate memory cell in a FinFET

FREESCALE SEMICONDUCTOR INC43 citations93
US7399675B2Jul 15, 2008

Electronic device including an array and process for forming the same

FREESCALE SEMICONDUCTOR INC16 citations93
US7250340B2Jul 31, 2007

Method of fabricating programmable structure including discontinuous storage elements and spacer control gates in a trench

FREESCALE SEMICONDUCTOR INC24 citations93
US7195983B2Mar 27, 2007

Programming, erasing, and reading structure for an NVM cell

FREESCALE SEMICONDUCTOR INC21 citations92
US6964902B2Nov 15, 2005

Method for removing nanoclusters from selected regions

FREESCALE SEMICONDUCTOR INC20 citations92
US6855979B2Feb 15, 2005

Multi-bit non-volatile memory device and method therefor

FREESCALE SEMICONDUCTOR INC21 citations92
US6751125B2Jun 15, 2004

Gate voltage reduction in a memory read

FREESCALE SEMICONDUCTOR INC37 citations92
US9508397B1Nov 29, 2016

Non-volatile memory (NVM) with endurance control

FREESCALE SEMICONDUCTOR INC8 citations84
US7619270B2Nov 17, 2009

Electronic device including discontinuous storage elements

FREESCALE SEMICONDUCTOR INC9 citations84
US7592224B2Sep 22, 2009

Method of fabricating a storage device including decontinuous storage elements within and between trenches

FREESCALE SEMICONDUCTOR INC10 citations84
US7226840B2Jun 5, 2007

Process for forming an electronic device including discontinuous storage elements

FREESCALE SEMICONDUCTOR INC15 citations84
US7205608B2Apr 17, 2007

Electronic device including discontinuous storage elements

FREESCALE SEMICONDUCTOR INC12 citations84
US7314798B2Jan 1, 2008

Method of fabricating a nonvolatile storage array with continuous control gate employing hot carrier injection programming

FREESCALE SEMICONDUCTOR INC8 citations74
US10109356B2Oct 23, 2018

Method and apparatus for stressing a non-volatile memory

FREESCALE SEMICONDUCTOR INC2 citations71
US9236498B1Jan 12, 2016

Low resistance polysilicon strap

FREESCALE SEMICONDUCTOR INC2 citations63
US7679125B2Mar 16, 2010

Back-gated semiconductor device with a storage layer and methods for forming thereof

FREESCALE SEMICONDUCTOR INC2 citations63
US7619275B2Nov 17, 2009

Process for forming an electronic device including discontinuous storage elements

FREESCALE SEMICONDUCTOR INC3 citations63
US7582929B2Sep 1, 2009

Electronic device including discontinuous storage elements

FREESCALE SEMICONDUCTOR INC4 citations63
US7394686B2Jul 1, 2008

Programmable structure including discontinuous storage elements and spacer control gates in a trench

FREESCALE SEMICONDUCTOR INC4 citations63
US7317222B2Jan 8, 2008

Memory cell using a dielectric having non-uniform thickness

FREESCALE SEMICONDUCTOR INC2 citations63
US7285819B2Oct 23, 2007

Nonvolatile storage array with continuous control gate employing hot carrier injection programming

FREESCALE SEMICONDUCTOR INC5 citations63
US7183161B2Feb 27, 2007

Programming and erasing structure for a floating gate memory cell and method of making

FREESCALE SEMICONDUCTOR INC4 citations63
US6847548B2Jan 25, 2005

Memory with multiple state cells and sensing method

FREESCALE SEMICONDUCTOR INC3 citations63
US7518179B2Apr 14, 2009

Virtual ground memory array and method therefor

FREESCALE SEMICONDUCTOR INC3 citations62
US7105395B2Sep 12, 2006

Programming and erasing structure for an NVM cell

FREESCALE SEMICONDUCTOR INC6 citations62
US6898129B2May 24, 2005

Erase of a memory having a non-conductive storage medium

FREESCALE SEMICONDUCTOR INC5 citations62
US9419088B2Aug 16, 2016

Low resistance polysilicon strap

FREESCALE SEMICONDUCTOR INC0 citations52
US9293207B1Mar 22, 2016

Embedded data and code non-volatile memory cell configurations

FREESCALE SEMICONDUCTOR INC0 citations52
US7745870B2Jun 29, 2010

Programming and erasing structure for a floating gate memory cell and method of making

FREESCALE SEMICONDUCTOR INC0 citations52
US7563681B2Jul 21, 2009

Double-gated non-volatile memory and methods for forming thereof

FREESCALE SEMICONDUCTOR INC0 citations52
US7391659B2Jun 24, 2008

Method for multiple step programming a memory cell

FREESCALE SEMICONDUCTOR INC0 citations52
US7094645B2Aug 22, 2006

Programming and erasing structure for a floating gate memory cell and method of making

FREESCALE SEMICONDUCTOR INC1 citations52
US7842573B2Nov 30, 2010

Virtual ground memory array and method therefor

FREESCALE SEMICONDUCTOR INC0 citations45
US9728410B2Aug 8, 2017

Split-gate non-volatile memory (NVM) cell and method therefor

FREESCALE SEMICONDUCTOR INC0 citations42
US7160775B2Jan 9, 2007

Method of discharging a semiconductor device

FREESCALE SEMICONDUCTOR INC0 citations42

MOTOROLA INC

4 patents

PERERA ASANGA H

2 patents

WINSTEAD BRIAN A

1 patent

ADETUTU OLUBUNMI O

1 patent