Inventor
SWIFT CRAIG T
US45 patents
⚠️ This page may combine multiple inventors who share the name “SWIFT CRAIG T”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FREESCALE SEMICONDUCTOR INC
37 patentsUS6887758B2May 3, 2005
Non-volatile memory device and method for forming
FREESCALE SEMICONDUCTOR INC70 citations98
US6791883B2Sep 14, 2004
Program and erase in a thin film storage non-volatile memory
FREESCALE SEMICONDUCTOR INC66 citations96
US7544980B2Jun 9, 2009
Split gate memory cell in a FinFET
FREESCALE SEMICONDUCTOR INC43 citations93
US7399675B2Jul 15, 2008
Electronic device including an array and process for forming the same
FREESCALE SEMICONDUCTOR INC16 citations93
US7250340B2Jul 31, 2007
Method of fabricating programmable structure including discontinuous storage elements and spacer control gates in a trench
FREESCALE SEMICONDUCTOR INC24 citations93
US7195983B2Mar 27, 2007
Programming, erasing, and reading structure for an NVM cell
FREESCALE SEMICONDUCTOR INC21 citations92
US6964902B2Nov 15, 2005
Method for removing nanoclusters from selected regions
FREESCALE SEMICONDUCTOR INC20 citations92
US6855979B2Feb 15, 2005
Multi-bit non-volatile memory device and method therefor
FREESCALE SEMICONDUCTOR INC21 citations92
US6751125B2Jun 15, 2004
Gate voltage reduction in a memory read
FREESCALE SEMICONDUCTOR INC37 citations92
US9508397B1Nov 29, 2016
Non-volatile memory (NVM) with endurance control
FREESCALE SEMICONDUCTOR INC8 citations84
US7619270B2Nov 17, 2009
Electronic device including discontinuous storage elements
FREESCALE SEMICONDUCTOR INC9 citations84
US7592224B2Sep 22, 2009
Method of fabricating a storage device including decontinuous storage elements within and between trenches
FREESCALE SEMICONDUCTOR INC10 citations84
US7226840B2Jun 5, 2007
Process for forming an electronic device including discontinuous storage elements
FREESCALE SEMICONDUCTOR INC15 citations84
US7205608B2Apr 17, 2007
Electronic device including discontinuous storage elements
FREESCALE SEMICONDUCTOR INC12 citations84
US7314798B2Jan 1, 2008
Method of fabricating a nonvolatile storage array with continuous control gate employing hot carrier injection programming
FREESCALE SEMICONDUCTOR INC8 citations74
US10109356B2Oct 23, 2018
Method and apparatus for stressing a non-volatile memory
FREESCALE SEMICONDUCTOR INC2 citations71
US9236498B1Jan 12, 2016
Low resistance polysilicon strap
FREESCALE SEMICONDUCTOR INC2 citations63
US7679125B2Mar 16, 2010
Back-gated semiconductor device with a storage layer and methods for forming thereof
FREESCALE SEMICONDUCTOR INC2 citations63
US7619275B2Nov 17, 2009
Process for forming an electronic device including discontinuous storage elements
FREESCALE SEMICONDUCTOR INC3 citations63
US7582929B2Sep 1, 2009
Electronic device including discontinuous storage elements
FREESCALE SEMICONDUCTOR INC4 citations63
US7394686B2Jul 1, 2008
Programmable structure including discontinuous storage elements and spacer control gates in a trench
FREESCALE SEMICONDUCTOR INC4 citations63
US7317222B2Jan 8, 2008
Memory cell using a dielectric having non-uniform thickness
FREESCALE SEMICONDUCTOR INC2 citations63
US7285819B2Oct 23, 2007
Nonvolatile storage array with continuous control gate employing hot carrier injection programming
FREESCALE SEMICONDUCTOR INC5 citations63
US7183161B2Feb 27, 2007
Programming and erasing structure for a floating gate memory cell and method of making
FREESCALE SEMICONDUCTOR INC4 citations63
US6847548B2Jan 25, 2005
Memory with multiple state cells and sensing method
FREESCALE SEMICONDUCTOR INC3 citations63
US7518179B2Apr 14, 2009
Virtual ground memory array and method therefor
FREESCALE SEMICONDUCTOR INC3 citations62
US7105395B2Sep 12, 2006
Programming and erasing structure for an NVM cell
FREESCALE SEMICONDUCTOR INC6 citations62
US6898129B2May 24, 2005
Erase of a memory having a non-conductive storage medium
FREESCALE SEMICONDUCTOR INC5 citations62
US9419088B2Aug 16, 2016
Low resistance polysilicon strap
FREESCALE SEMICONDUCTOR INC0 citations52
US9293207B1Mar 22, 2016
Embedded data and code non-volatile memory cell configurations
FREESCALE SEMICONDUCTOR INC0 citations52
US7745870B2Jun 29, 2010
Programming and erasing structure for a floating gate memory cell and method of making
FREESCALE SEMICONDUCTOR INC0 citations52
US7563681B2Jul 21, 2009
Double-gated non-volatile memory and methods for forming thereof
FREESCALE SEMICONDUCTOR INC0 citations52
US7391659B2Jun 24, 2008
Method for multiple step programming a memory cell
FREESCALE SEMICONDUCTOR INC0 citations52
US7094645B2Aug 22, 2006
Programming and erasing structure for a floating gate memory cell and method of making
FREESCALE SEMICONDUCTOR INC1 citations52
US7842573B2Nov 30, 2010
Virtual ground memory array and method therefor
FREESCALE SEMICONDUCTOR INC0 citations45
US9728410B2Aug 8, 2017
Split-gate non-volatile memory (NVM) cell and method therefor
FREESCALE SEMICONDUCTOR INC0 citations42
US7160775B2Jan 9, 2007
Method of discharging a semiconductor device
FREESCALE SEMICONDUCTOR INC0 citations42
MOTOROLA INC
4 patentsUS6706599B1Mar 16, 2004
Multi-bit non-volatile memory device and method therefor
MOTOROLA INC127 citations98
US6713812B1Mar 30, 2004
Non-volatile memory device having an anti-punch through (APT) region
MOTOROLA INC48 citations92
US5981340ANov 9, 1999
Method of building an EPROM cell without drain disturb and reduced select gate resistance
MOTOROLA INC38 citations92
US6295229B1Sep 25, 2001
Semiconductor device and method of operating it
MOTOROLA INC17 citations84