Inventor
SADD MICHAEL A
US42 patents
⚠️ This page may combine multiple inventors who share the name “SADD MICHAEL A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FREESCALE SEMICONDUCTOR INC
30 patentsUS9640256B1May 2, 2017
Nonvolatile static random access memory (NVSRAM) system having a static random access memory (SRAM) array and a resistive memory array
FREESCALE SEMICONDUCTOR INC23 citations94
US9548116B2Jan 17, 2017
Resistive memory with program verify and erase verify capability
FREESCALE SEMICONDUCTOR INC36 citations94
US9520173B1Dec 13, 2016
Magnetic random access memory (MRAM) and method of operation
FREESCALE SEMICONDUCTOR INC23 citations92
US7517747B2Apr 14, 2009
Nanocrystal non-volatile memory cell and method therefor
FREESCALE SEMICONDUCTOR INC15 citations92
US7456465B2Nov 25, 2008
Split gate memory cell and method therefor
FREESCALE SEMICONDUCTOR INC19 citations92
US9514810B1Dec 6, 2016
Resistive non-volatile memory cell and method for programming same
FREESCALE SEMICONDUCTOR INC10 citations84
US7800164B2Sep 21, 2010
Nanocrystal non-volatile memory cell and method therefor
FREESCALE SEMICONDUCTOR INC6 citations74
US9935616B2Apr 3, 2018
Programmable resistive elements as variable tuning elements
FREESCALE SEMICONDUCTOR INC2 citations73
US9923553B2Mar 20, 2018
Systems and methods for non-volatile flip flops
FREESCALE SEMICONDUCTOR INC2 citations73
US9823874B2Nov 21, 2017
Memory device with combined non-volatile memory (NVM) and volatile memory
FREESCALE SEMICONDUCTOR INC4 citations73
US9613701B2Apr 4, 2017
Ternary content addressable memory (TCAM) with programmable resistive elements
FREESCALE SEMICONDUCTOR INC4 citations73
US9607663B2Mar 28, 2017
Non-volatile dynamic random access memory (NVDRAM) with programming line
FREESCALE SEMICONDUCTOR INC2 citations73
US9576661B2Feb 21, 2017
Systems and methods for SRAM with backup non-volatile memory that includes MTJ resistive elements
FREESCALE SEMICONDUCTOR INC2 citations73
US7279997B2Oct 9, 2007
Voltage controlled oscillator with a multiple gate transistor and method therefor
FREESCALE SEMICONDUCTOR INC8 citations72
US9741417B1Aug 22, 2017
Sense amplifier circuit
FREESCALE SEMICONDUCTOR INC6 citations71
US9741435B1Aug 22, 2017
Sense amplifier circuit
FREESCALE SEMICONDUCTOR INC5 citations71
US8351276B2Jan 8, 2013
Soft program of a non-volatile memory block
FREESCALE SEMICONDUCTOR INC3 citations63
US7732278B2Jun 8, 2010
Split gate memory cell and method therefor
FREESCALE SEMICONDUCTOR INC5 citations63
US7679125B2Mar 16, 2010
Back-gated semiconductor device with a storage layer and methods for forming thereof
FREESCALE SEMICONDUCTOR INC2 citations63
US7622349B2Nov 24, 2009
Floating gate non-volatile memory and method thereof
FREESCALE SEMICONDUCTOR INC2 citations63
US7619275B2Nov 17, 2009
Process for forming an electronic device including discontinuous storage elements
FREESCALE SEMICONDUCTOR INC3 citations63
US7582929B2Sep 1, 2009
Electronic device including discontinuous storage elements
FREESCALE SEMICONDUCTOR INC4 citations63
US6847548B2Jan 25, 2005
Memory with multiple state cells and sensing method
FREESCALE SEMICONDUCTOR INC3 citations63
US9773537B2Sep 26, 2017
Sense path circuitry suitable for magnetic tunnel junction memories
FREESCALE SEMICONDUCTOR INC0 citations52
US9595329B1Mar 14, 2017
Non-volatile random access memory (NVRAM) with backup control
FREESCALE SEMICONDUCTOR INC0 citations52
US9515635B1Dec 6, 2016
Programmable resistive elements as variable tuning elements
FREESCALE SEMICONDUCTOR INC1 citations52
US7563681B2Jul 21, 2009
Double-gated non-volatile memory and methods for forming thereof
FREESCALE SEMICONDUCTOR INC0 citations52
US10297314B2May 21, 2019
Systems and methods for non-volatile flip flops
FREESCALE SEMICONDUCTOR INC0 citations42
US9672911B2Jun 6, 2017
Static random access memory (SRAM) with programmable resistive elements
FREESCALE SEMICONDUCTOR INC0 citations42
US7160775B2Jan 9, 2007
Method of discharging a semiconductor device
FREESCALE SEMICONDUCTOR INC0 citations42
NXP USA INC
6 patentsUS10224088B1Mar 5, 2019
Memory with a global reference circuit
NXP USA INC10 citations82
US9847127B1Dec 19, 2017
Resistive non-volatile memory and a method for sensing a memory cell in a resistive non-volatile memory
NXP USA INC4 citations73
US9779795B1Oct 3, 2017
Magnetic random access memory (MRAM) and method of operation
NXP USA INC6 citations73
US11404118B1Aug 2, 2022
Memory with sense amplifiers
NXP USA INC0 citations52
US10410705B2Sep 10, 2019
Sense path circuitry suitable for magnetic tunnel junction memories
NXP USA INC0 citations52
US12051476B2Jul 30, 2024
Testing disruptive memories
NXP USA INC0 citations47
MOTOROLA INC
3 patentsUS6297095B1Oct 2, 2001
Memory device that includes passivated nanoclusters and method for manufacture
MOTOROLA INC284 citations99
US6413819B1Jul 2, 2002
Memory device and method for using prefabricated isolated storage elements
MOTOROLA INC128 citations98
US6444545B1Sep 3, 2002
Device structure for storing charge and method therefore
MOTOROLA INC99 citations97