Inventor
HAN YUN
US29 patents
⚠️ This page may combine multiple inventors who share the name “HAN YUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
22 patentsUS11079682B1Aug 3, 2021
Methods for extreme ultraviolet (EUV) resist patterning development
TOKYO ELECTRON LTD18 citations94
US11342195B1May 24, 2022
Methods for anisotropic etch of silicon-based materials with selectivity to organic materials
TOKYO ELECTRON LTD7 citations85
US11094543B1Aug 17, 2021
Defect correction on metal resists
TOKYO ELECTRON LTD7 citations84
US11195723B1Dec 7, 2021
Non-atomic layer deposition (ALD) method of forming sidewall passivation layer during high aspect ratio carbon layer etch
TOKYO ELECTRON LTD5 citations82
US12288692B2Apr 29, 2025
Method of forming a FET structure by selective deposition of film on source/drain contact
TOKYO ELECTRON LTD0 citations62
US12189297B2Jan 7, 2025
Methods for extreme ultraviolet (EUV) resist patterning development
TOKYO ELECTRON LTD0 citations62
US11605539B2Mar 14, 2023
Defect correction on metal resists
TOKYO ELECTRON LTD1 citations62
US11527413B2Dec 13, 2022
Cyclic plasma etch process
TOKYO ELECTRON LTD1 citations62
US12598933B2Apr 7, 2026
Semiconductor devices and methods of manufacturing the same
TOKYO ELECTRON LTD0 citations61
US12300500B2May 13, 2025
Etching of polycrystalline semiconductors
TOKYO ELECTRON LTD0 citations61
US11651967B2May 16, 2023
Non-atomic layer deposition (ALD) method of forming sidewall passivation layer during high aspect ratio carbon layer etch
TOKYO ELECTRON LTD0 citations61
US12341009B2Jun 24, 2025
Variable hardness amorphous carbon mask
TOKYO ELECTRON LTD0 citations60
US12266533B2Apr 1, 2025
Sacrificial capping layer for contact etch
TOKYO ELECTRON LTD0 citations60
US12040176B2Jul 16, 2024
Technologies for high aspect ratio carbon etching with inserted charge dissipation layer
TOKYO ELECTRON LTD0 citations59
US12575353B2Mar 10, 2026
Method for lateral etch with bottom passivation
TOKYO ELECTRON LTD0 citations57
US12588262B2Mar 24, 2026
Sacrificial gate capping layer for gate protection during source/drain contact opening
TOKYO ELECTRON LTD0 citations51
US12451329B2Oct 21, 2025
Plasma processing apparatus with tunable electrical characteristic
TOKYO ELECTRON LTD0 citations51
US11942307B2Mar 26, 2024
Plasma processing with radio frequency (RF) source and bias signal waveforms
TOKYO ELECTRON LTD0 citations51
US11532517B2Dec 20, 2022
Localized etch stop layer
TOKYO ELECTRON LTD0 citations51
US12237216B2Feb 25, 2025
Method for filling recessed features in semiconductor devices with a low-resistivity metal
TOKYO ELECTRON LTD0 citations50
US11961735B2Apr 16, 2024
Cyclic plasma processing
TOKYO ELECTRON LTD0 citations48
US12400872B2Aug 26, 2025
Sacrificial capping layer for gate protection
TOKYO ELECTRON LTD0 citations47