Inventor
YOON CHANSIC
KR9 patents
Patents
9 patentsUS12598738B2Apr 7, 2026
Semiconductor memory device including lower contact plug protruding from sidewall spacers
SAMSUNG ELECTRONICS CO LTD0 citations61
US11917815B2Feb 27, 2024
Semiconductor and manufacturing method of the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11616066B2Mar 28, 2023
Semiconductor device and manufacturing method of the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11088143B2Aug 10, 2021
Semiconductor and manufacturing method of the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12289881B2Apr 29, 2025
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations60
US12490489B2Dec 2, 2025
Semiconductor devices having spacer structures
SAMSUNG ELECTRONICS CO LTD0 citations59
US12575388B2Mar 10, 2026
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations57
US12575079B2Mar 10, 2026
Semiconductor device having concave lower sidewall portion on gate structure
SAMSUNG ELECTRONICS CO LTD0 citations55
US12489056B2Dec 2, 2025
Semiconductor device having an upper end of a lower spacer structure on a level same as or lower than a lower end of a storage node contact
SAMSUNG ELECTRONICS CO LTD0 citations50