P

Inventor

NATSUAKI NOBUYOSHI

JP34 patents
⚠️ This page may combine multiple inventors who share the name “NATSUAKI NOBUYOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HITACHI LTD

25 patents
US6784116B2Aug 31, 2004

Fabrication process of a semiconductor integrated circuit device

HITACHI LTD29 citations96
US6239041B1May 29, 2001

Method for fabricating semiconductor integrated circuit device

HITACHI LTD36 citations96
US6197702B1Mar 6, 2001

Fabrication process of a semiconductor integrated circuit device

HITACHI LTD59 citations96
US4655875AApr 7, 1987

Ion implantation process

HITACHI LTD64 citations96
US6066508AMay 23, 2000

Process for manufacturing semiconductor integrated circuit device including treatment of gas used in the process

HITACHI LTD43 citations95
US4565584AJan 21, 1986

Method of producing single crystal film utilizing a two-step heat treatment

HITACHI LTD76 citations95
US6569780B2May 27, 2003

Method for fabricating semiconductor integrated circuit device

HITACHI LTD13 citations93
US6528431B2Mar 4, 2003

Method for fabricating semiconductor integrated circuit drive using an oxygen and hydrogen catalyst

HITACHI LTD17 citations93
US6503819B2Jan 7, 2003

Fabrication process of a semiconductor integrated circuit device

HITACHI LTD27 citations93
US4808546AFeb 28, 1989

SOI process for forming a thin film transistor using solid phase epitaxy

HITACHI LTD37 citations92
US4498951AFeb 12, 1985

Method of manufacturing single-crystal film

HITACHI LTD39 citations92
US6521550B2Feb 18, 2003

Process for manufacturing semiconductor integrated circuit device including treatment of gas used in the process

HITACHI LTD14 citations91
US4729964AMar 8, 1988

Method of forming twin doped regions of the same depth by high energy implant

HITACHI LTD51 citations91
US6528403B2Mar 4, 2003

Fabrication process of a semiconductor integrated circuit device

HITACHI LTD11 citations82
US6417114B2Jul 9, 2002

Method for fabricating semiconductor integrated circuit device

HITACHI LTD7 citations82
US7122469B2Oct 17, 2006

Fabrication process of a semiconductor integrated circuit device

HITACHI LTD4 citations74
US6987069B2Jan 17, 2006

Fabrication process of a semiconductor integrated circuit device

HITACHI LTD6 citations74
US6596650B2Jul 22, 2003

Method for fabricating semiconductor integrated circuit device

HITACHI LTD6 citations74
US6518201B1Feb 11, 2003

Method for fabricating semiconductor integrated circuit device

HITACHI LTD4 citations74
US6518202B2Feb 11, 2003

Method for fabricating semiconductor integrated circuit device

HITACHI LTD6 citations74
US4351674ASep 28, 1982

Method of producing a semiconductor device

HITACHI LTD13 citations74
US4819055AApr 4, 1989

Semiconductor device having a PN junction formed on an insulator film

HITACHI LTD8 citations73
US6602808B2Aug 5, 2003

Process for manufacturing semiconductor integrated circuit device including treatment of gas used in the process

HITACHI LTD6 citations72
US6319860B1Nov 20, 2001

Process for manufacturing semiconductor integrated circuit device including treatment of gas used in the process

HITACHI LTD9 citations72
US4742025AMay 3, 1988

Method of fabricating a semiconductor device including selective etching of a silicide layer

HITACHI LTD16 citations70

RENESAS TECH CORP

7 patents

(unassigned)

1 patent

RENESAS ELECTRONICS CORP

1 patent