Inventor · disambiguated record
Hans-Peter Zwicknagl
Also filed as: ZWICKNAGL HANS P · ZWICKNAGL HANS-PETER
9 granted patents·85 citations·filing 1988–2000
88Inventor score
Top patents by PatentIndex Score
9 records- 0164US6548882B1Power transistor cellINFINEON TECHNOLOGIES AG·Filed 2000·Granted Apr 15, 2003·16 cites·14 claims
- 0253US5093272AManufacturing method for a self-aligned emitter-base-complex for heterobipolar transistorsSIEMENS AG·Filed 1990·Granted Mar 3, 1992·16 cites·12 claims
- 0344US5436475ABipolar transistor for high power in the microwave rangeSIEMENS AG·Filed 1994·Granted Jul 25, 1995·10 cites·11 claims
- 0441US5340755AMethod of making planar heterobipolar transistor having trenched isolation of the collector terminalSIEMENS AKTIEGENSELLSCHAFT·Filed 1992·Granted Aug 23, 1994·12 cites·12 claims
- 0541US5070028AMethod for manufacturing bipolar transistors having extremely reduced base-collection capacitanceSIEMENS AG·Filed 1991·Granted Dec 3, 1991·8 cites·10 claims
- 0639US4894350AMethod for manufacturing ohmic contacts having low transfer resistancesSIEMENS AG·Filed 1988·Granted Jan 16, 1990·9 cites·3 claims
- 0737US4904612AMethod for manufacturing a planar, self-aligned emitter-base complexSIEMENS AG·Filed 1989·Granted Feb 27, 1990·6 cites·20 claims
- 0836US5274266APermeable base transistor having selectively grown emitterSIEMENS AG·Filed 1993·Granted Dec 28, 1993·5 cites·8 claims
- 0923US5346862AMethod for the electrical insulation of a circuit function element on a semiconductor componentSIEMENS AG·Filed 1993·Granted Sep 13, 1994·3 cites·12 claims
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