Inventor
BAEK JONG-HYEOB
KR20 patents
⚠️ This page may combine multiple inventors who share the name “BAEK JONG-HYEOB”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
KOREA ELECTRONICS TELECOMM
12 patentsUS6410347B1Jun 25, 2002
Real time epitaxial growth of vertical cavity surface-emitting laser using a reflectometry
KOREA ELECTRONICS TELECOMM19 citations92
US5472505ADec 5, 1995
Apparatus for monitoring films during MOCVD
KOREA ELECTRONICS TELECOMM20 citations91
US6181843B1Jan 30, 2001
Optical switch of surface transmission type by one-dimensional array method
KOREA ELECTRONICS TELECOMM9 citations73
US5705403AJan 6, 1998
Method of measuring doping characteristic of compound semiconductor in real time
KOREA ELECTRONICS TELECOMM10 citations73
US5686350ANov 11, 1997
Method for fabricating defect-free compound semiconductor thin film on dielectric thin film
KOREA ELECTRONICS TELECOMM12 citations73
US5456206AOct 10, 1995
Method for two-dimensional epitaxial growth of III-V compound semiconductors
KOREA ELECTRONICS TELECOMM19 citations73
US6193900B1Feb 27, 2001
Method for sensing etch of distributed bragg reflector in real time
KOREA ELECTRONICS TELECOMM6 citations62
US5883911AMar 16, 1999
Surface-emitting laser device
KOREA ELECTRONICS TELECOMM3 citations62
US5856206AJan 5, 1999
Method for fabricating bragg reflector using in situ laser reflectometry
KOREA ELECTRONICS TELECOMM6 citations62
US5748319AMay 5, 1998
Method for sensing complete removal of oxide layer from substrate by thermal etching with real time
KOREA ELECTRONICS TELECOMM4 citations62
US5900056AMay 4, 1999
Method for growing epitaxial layers of III-V compound semiconductors
KOREA ELECTRONICS TELECOMM1 citations51
US5855669AJan 5, 1999
Method for fabricating grating coupler
KOREA ELECTRONICS TELECOMM0 citations51
KOREA PHOTONICS TECH INST
3 patentsUS10355166B2Jul 16, 2019
Light-emitting diode structure, transfer assembly, and transfer method using the same
KOREA PHOTONICS TECH INST7 citations79
US9000414B2Apr 7, 2015
Light emitting diode having heterogeneous protrusion structures
KOREA PHOTONICS TECH INST0 citations51
US10662511B2May 26, 2020
Nitride semiconductor light-emitting device, and method for manufacturing same
KOREA PHOTONICS TECH INST0 citations38