Inventor
VENKATESAN MAHALINGAM
US19 patents
⚠️ This page may combine multiple inventors who share the name “VENKATESAN MAHALINGAM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
16 patentsUS5645646AJul 8, 1997
Susceptor for deposition apparatus
APPLIED MATERIALS INC406 citations99
US5551982ASep 3, 1996
Semiconductor wafer process chamber with susceptor back coating
APPLIED MATERIALS INC136 citations99
US5932286AAug 3, 1999
Deposition of silicon nitride thin films
APPLIED MATERIALS INC136 citations98
US6113703ASep 5, 2000
Method and apparatus for processing the upper and lower faces of a wafer
APPLIED MATERIALS INC367 citations96
US5916369AJun 29, 1999
Gas inlets for wafer processing chamber
APPLIED MATERIALS INC117 citations96
US5695819ADec 9, 1997
Method of enhancing step coverage of polysilicon deposits
APPLIED MATERIALS INC79 citations96
US5599397AFeb 4, 1997
Semiconductor wafer process chamber with suspector back coating
APPLIED MATERIALS INC43 citations96
US6402850B1Jun 11, 2002
Depositing polysilicon films having improved uniformity and apparatus therefor
APPLIED MATERIALS INC28 citations92
US5863598AJan 26, 1999
Method of forming doped silicon in high aspect ratio openings
APPLIED MATERIALS INC36 citations92
US5834059ANov 10, 1998
Process of depositing a layer of material on a wafer with susceptor back coating
APPLIED MATERIALS INC29 citations92
US5576059ANov 19, 1996
Depositing polysilicon films having improved uniformity and apparatus therefor
APPLIED MATERIALS INC39 citations92
US6500734B2Dec 31, 2002
Gas inlets for wafer processing chamber
APPLIED MATERIALS INC45 citations91
US5725673AMar 10, 1998
Semiconductor wafer process chamber with susceptor back coating
APPLIED MATERIALS INC14 citations82
US6146464ANov 14, 2000
Susceptor for deposition apparatus
APPLIED MATERIALS INC15 citations74
US6284650B1Sep 4, 2001
Integrated tungsten-silicide processes
APPLIED MATERIALS INC4 citations57
US9263078B2Feb 16, 2016
Patterning of magnetic thin film using energized ions
APPLIED MATERIALS INC0 citations52