Inventor
WANG SUNG-HSIUNG
TW11 patents
⚠️ This page may combine multiple inventors who share the name “WANG SUNG-HSIUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
6 patentsUS6903644B2Jun 7, 2005
Inductor device having improved quality factor
TAIWAN SEMICONDUCTOR MFG28 citations92
US7038266B2May 2, 2006
Metal-insulator-metal (MIM) capacitor structure formed with dual damascene structure
TAIWAN SEMICONDUCTOR MFG16 citations91
US7074721B2Jul 11, 2006
Method for forming thick copper self-aligned dual damascene
TAIWAN SEMICONDUCTOR MFG17 citations83
US7297629B2Nov 20, 2007
Ultra-thick metal-copper dual damascene process
TAIWAN SEMICONDUCTOR MFG8 citations72
US7229879B2Jun 12, 2007
Metal-insulator-metal (MIM) capacitor structure formed with dual damascene structure
TAIWAN SEMICONDUCTOR MFG0 citations51
US7968968B2Jun 28, 2011
Inductor utilizing pad metal layer
TAIWAN SEMICONDUCTOR MFG1 citations45
UNITED MICROELECTRONICS CORP
5 patentsUS6559004B1May 6, 2003
Method for forming three dimensional semiconductor structure and three dimensional capacitor
UNITED MICROELECTRONICS CORP51 citations92
US6617234B2Sep 9, 2003
Method of forming metal fuse and bonding pad
UNITED MICROELECTRONICS CORP13 citations83
US6583489B2Jun 24, 2003
Method for forming interconnect structure with low dielectric constant
UNITED MICROELECTRONICS CORP10 citations73
US6355568B1Mar 12, 2002
Cleaning method for copper dual damascene process
UNITED MICROELECTRONICS CORP7 citations73
US6417096B1Jul 9, 2002
Method for avoiding photo residue in dual damascene with acid treatment
UNITED MICROELECTRONICS CORP12 citations72