Inventor
RAGNARSSON LARS-AKE
BE20 patents
⚠️ This page may combine multiple inventors who share the name “RAGNARSSON LARS-AKE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
8 patentsUS6852575B2Feb 8, 2005
Method of forming lattice-matched structure on silicon and structure formed thereby
IBM43 citations95
US7432550B2Oct 7, 2008
Semiconductor structure including mixed rare earth oxide formed on silicon
IBM16 citations92
US6891231B2May 10, 2005
Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier
IBM19 citations92
US6831339B2Dec 14, 2004
Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same
IBM24 citations92
US7923743B2Apr 12, 2011
Semiconductor structure including mixed rare earth oxide formed on silicon
IBM9 citations83
US7648864B2Jan 19, 2010
Semiconductor structure including mixed rare earth oxide formed on silicon
IBM4 citations73
US7169674B2Jan 30, 2007
Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier
IBM9 citations73
US7488640B2Feb 10, 2009
Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same
IBM0 citations51
IMEC VZW
4 patentsUS9287273B2Mar 15, 2016
Method for manufacturing a semiconductor device comprising transistors each having a different effective work function
IMEC VZW418 citations96
US10607896B2Mar 31, 2020
Method of forming gate of semiconductor device and semiconductor device having same
IMEC VZW9 citations83
US11367662B2Jun 21, 2022
Semiconductor devices and methods of forming the same
IMEC VZW3 citations72
US9892923B2Feb 13, 2018
Method for tuning the effective work function of a metal
IMEC VZW1 citations50
IMEC
3 patentsTOKYO ELECTRON LTD
3 patentsUS11894240B2Feb 6, 2024
Semiconductor processing systems with in-situ electrical bias
TOKYO ELECTRON LTD0 citations59
US11837652B2Dec 5, 2023
Semiconductor processing system with in-situ electrical bias and methods thereof
TOKYO ELECTRON LTD0 citations58
US11335792B2May 17, 2022
Semiconductor processing system with in-situ electrical bias and methods thereof
TOKYO ELECTRON LTD0 citations58