Inventor
BAE BYOUNG-JAE
KR32 patents
⚠️ This page may combine multiple inventors who share the name “BAE BYOUNG-JAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
23 patentsUS7943502B2May 17, 2011
Method of forming a phase change memory device
SAMSUNG ELECTRONICS CO LTD26 citations92
US7727884B2Jun 1, 2010
Methods of forming a semiconductor device including a phase change material layer
SAMSUNG ELECTRONICS CO LTD19 citations92
US7910967B2Mar 22, 2011
Ferroelectric capacitor having three-dimensional structure, nonvolatile memory device having the same and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US7361228B2Apr 22, 2008
Showerheads for providing a gas to a substrate and apparatus
SAMSUNG ELECTRONICS CO LTD15 citations84
US7312091B2Dec 25, 2007
Methods for forming a ferroelectric layer and capacitor and FRAM using the same
SAMSUNG ELECTRONICS CO LTD10 citations84
US8790976B2Jul 29, 2014
Method of forming semiconductor device having self-aligned plug
SAMSUNG ELECTRONICS CO LTD5 citations83
US7759667B2Jul 20, 2010
Phase change memory device including resistant material
SAMSUNG ELECTRONICS CO LTD17 citations83
US10476638B2Nov 12, 2019
Operating method and apparatus according to data duplicate retransmission in mobile communication system
SAMSUNG ELECTRONICS CO LTD1 citations72
US9985752B2May 29, 2018
Operating method and apparatus according to data duplicate retransmission in mobile communication system
SAMSUNG ELECTRONICS CO LTD2 citations72
US8343798B2Jan 1, 2013
Method fabricating phase-change semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations63
US7803654B2Sep 28, 2010
Variable resistance non-volatile memory cells and methods of fabricating same
SAMSUNG ELECTRONICS CO LTD6 citations63
US7586774B2Sep 8, 2009
Stacked ferroelectric memory devices, methods of manufacturing the same, ferroelectric memory circuits and methods of driving the same
SAMSUNG ELECTRONICS CO LTD5 citations63
US11088787B2Aug 10, 2021
Operating method and apparatus according to data duplicate retransmission in mobile communication system
SAMSUNG ELECTRONICS CO LTD0 citations62
US7867880B2Jan 11, 2011
Metal precursors for low temperature deposition and methods of forming a metal thin layer and manufacturing a phase-change memory device using the metal precursors
SAMSUNG ELECTRONICS CO LTD6 citations62
US7796648B2Sep 14, 2010
Apparatus and method for generating and parsing MAC PDU in a mobile communication system
SAMSUNG ELECTRONICS CO LTD5 citations62
US7585683B2Sep 8, 2009
Methods of fabricating ferroelectric devices
SAMSUNG ELECTRONICS CO LTD5 citations62
US10134980B2Nov 20, 2018
Magnetoresistive random access memory device
SAMSUNG ELECTRONICS CO LTD0 citations52
US9985202B2May 29, 2018
Method of fabricating memory device
SAMSUNG ELECTRONICS CO LTD0 citations52
US9735349B2Aug 15, 2017
Magnetoresistive random access memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US8834968B2Sep 16, 2014
Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device
SAMSUNG ELECTRONICS CO LTD0 citations52
US9907000B2Feb 27, 2018
Method and apparatus for identifying microcells in macrocells in wireless communication systems, and handover method and system using same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7583095B2Sep 1, 2009
High-density probe array
SAMSUNG ELECTRONICS CO LTD0 citations51
US9008656B2Apr 14, 2015
Method and apparatus of searching for operator network in a multi-radio access technology environment
SAMSUNG ELECTRONICS CO LTD1 citations45
BAE BYOUNG-JAE
4 patentsUS9166746B2Oct 20, 2015
Operating method and apparatus according to data duplicate retransmission in mobile communication system
BAE BYOUNG-JAE6 citations82
US8804556B2Aug 12, 2014
System and method for handover in wireless communication system
BAE BYOUNG-JAE2 citations61
US8142846B2Mar 27, 2012
Method of forming phase change material layer using Ge(II) source, and method of fabrication phase change memory device
BAE BYOUNG-JAE4 citations61
US8852686B2Oct 7, 2014
Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device
BAE BYOUNG-JAE0 citations51