P

Inventor

BAE BYOUNG-JAE

KR32 patents
⚠️ This page may combine multiple inventors who share the name “BAE BYOUNG-JAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

23 patents
US7943502B2May 17, 2011

Method of forming a phase change memory device

SAMSUNG ELECTRONICS CO LTD26 citations92
US7727884B2Jun 1, 2010

Methods of forming a semiconductor device including a phase change material layer

SAMSUNG ELECTRONICS CO LTD19 citations92
US7910967B2Mar 22, 2011

Ferroelectric capacitor having three-dimensional structure, nonvolatile memory device having the same and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US7361228B2Apr 22, 2008

Showerheads for providing a gas to a substrate and apparatus

SAMSUNG ELECTRONICS CO LTD15 citations84
US7312091B2Dec 25, 2007

Methods for forming a ferroelectric layer and capacitor and FRAM using the same

SAMSUNG ELECTRONICS CO LTD10 citations84
US8790976B2Jul 29, 2014

Method of forming semiconductor device having self-aligned plug

SAMSUNG ELECTRONICS CO LTD5 citations83
US7759667B2Jul 20, 2010

Phase change memory device including resistant material

SAMSUNG ELECTRONICS CO LTD17 citations83
US10476638B2Nov 12, 2019

Operating method and apparatus according to data duplicate retransmission in mobile communication system

SAMSUNG ELECTRONICS CO LTD1 citations72
US9985752B2May 29, 2018

Operating method and apparatus according to data duplicate retransmission in mobile communication system

SAMSUNG ELECTRONICS CO LTD2 citations72
US8343798B2Jan 1, 2013

Method fabricating phase-change semiconductor memory device

SAMSUNG ELECTRONICS CO LTD2 citations63
US7803654B2Sep 28, 2010

Variable resistance non-volatile memory cells and methods of fabricating same

SAMSUNG ELECTRONICS CO LTD6 citations63
US7586774B2Sep 8, 2009

Stacked ferroelectric memory devices, methods of manufacturing the same, ferroelectric memory circuits and methods of driving the same

SAMSUNG ELECTRONICS CO LTD5 citations63
US11088787B2Aug 10, 2021

Operating method and apparatus according to data duplicate retransmission in mobile communication system

SAMSUNG ELECTRONICS CO LTD0 citations62
US7867880B2Jan 11, 2011

Metal precursors for low temperature deposition and methods of forming a metal thin layer and manufacturing a phase-change memory device using the metal precursors

SAMSUNG ELECTRONICS CO LTD6 citations62
US7796648B2Sep 14, 2010

Apparatus and method for generating and parsing MAC PDU in a mobile communication system

SAMSUNG ELECTRONICS CO LTD5 citations62
US7585683B2Sep 8, 2009

Methods of fabricating ferroelectric devices

SAMSUNG ELECTRONICS CO LTD5 citations62
US10134980B2Nov 20, 2018

Magnetoresistive random access memory device

SAMSUNG ELECTRONICS CO LTD0 citations52
US9985202B2May 29, 2018

Method of fabricating memory device

SAMSUNG ELECTRONICS CO LTD0 citations52
US9735349B2Aug 15, 2017

Magnetoresistive random access memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations52
US8834968B2Sep 16, 2014

Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device

SAMSUNG ELECTRONICS CO LTD0 citations52
US9907000B2Feb 27, 2018

Method and apparatus for identifying microcells in macrocells in wireless communication systems, and handover method and system using same

SAMSUNG ELECTRONICS CO LTD0 citations51
US7583095B2Sep 1, 2009

High-density probe array

SAMSUNG ELECTRONICS CO LTD0 citations51
US9008656B2Apr 14, 2015

Method and apparatus of searching for operator network in a multi-radio access technology environment

SAMSUNG ELECTRONICS CO LTD1 citations45

BAE BYOUNG-JAE

4 patents

OH GYU-HWAN

2 patents

PARK YOUNG-LIM

1 patent

JOO YANG-ICK

1 patent

KIM HYE-JEONG

1 patent