Inventor · disambiguated record
Gianluca Camuso
Also filed as: CAMUSO GIANLUCA
9 granted patents·3 pending applications·7 citations·filing 2015–2023
78Inventor score
Files withINFINEON TECHNOLOGIES AMERICAS CORP8INFINEON TECHNOLOGIES AUSTRIA AG3SILICONIX INCORPORATED1
Top patents by PatentIndex Score
12 records- 0177US9871128B2Bipolar semiconductor device with sub-cathode enhancement regionsINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Granted Jan 16, 2018·3 cites·18 claims
- 0274US10483356B2Power semiconductor device with optimized field-plate designSILICONIX INCORPORATED·Filed 2018·Granted Nov 19, 2019·3 cites·10 claims
- 0363US10164078B2Bipolar semiconductor device with multi-trench enhancement regionsINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Granted Dec 25, 2018·1 cites·18 claims
- 0462US2023207636A1High Voltage Blocking III-V Semiconductor DeviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Application pending·0 cites
- 0552US10115812B2Semiconductor device having a superjunction structureINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2017·Granted Oct 30, 2018·0 cites·21 claims
- 0650US9799725B2IGBT having a deep superjunction structureINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Oct 24, 2017·0 cites·21 claims
- 0750US9685506B2IGBT having an inter-trench superjunction structureINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Jun 20, 2017·0 cites·20 claims
- 0850US2024170374A1Semiconductor Package with Current SensingINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Application pending·0 cites
- 0948US9768284B2Bipolar semiconductor device having a charge-balanced inter-trench structureINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Sep 19, 2017·0 cites·14 claims
- 1046US11588024B2High voltage blocking III-V semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Feb 21, 2023·0 cites·16 claims
- 1142US9831330B2Bipolar semiconductor device having a deep charge-balanced structureINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Nov 28, 2017·0 cites·10 claims
- 1234US2017271445A1Bipolar Semiconductor Device Having Localized Enhancement RegionsINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →