Inventor
KIM MOOSUNG
KR30 patents
⚠️ This page may combine multiple inventors who share the name “KIM MOOSUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
KIM MOOSUNG
8 patentsUS8705273B2Apr 22, 2014
Negative voltage generator, decoder, nonvolatile memory device and memory system using negative voltage
KIM MOOSUNG35 citations92
US8508996B2Aug 13, 2013
Method of programming non-volatile memory device and non-volatile memory device using the same
KIM MOOSUNG24 citations92
US8488384B2Jul 16, 2013
Nonvolatile memory device, driving method thereof, and memory system having the same
KIM MOOSUNG10 citations83
US8199581B2Jun 12, 2012
Nonvolatile memory device, driving method thereof, and memory system having the same
KIM MOOSUNG12 citations83
US8081508B2Dec 20, 2011
Flash memory device and memory system including the same
KIM MOOSUNG15 citations83
US8248852B2Aug 21, 2012
Nonvolatile memory devices operable using negative bias voltages and related methods of operation
KIM MOOSUNG5 citations62
US8630124B2Jan 14, 2014
Nonvolatile memory devices having memory cell arrays with unequal-sized memory cells and methods of operating same
KIM MOOSUNG2 citations61
US9792206B2Oct 17, 2017
Memory controller and memory system including the same
KIM MOOSUNG0 citations51
SAMSUNG ELECTRONICS CO LTD
8 patentsUS8018782B2Sep 13, 2011
Non-volatile memory devices and methods of erasing non-volatile memory devices
SAMSUNG ELECTRONICS CO LTD16 citations84
US9087608B2Jul 21, 2015
Method of programming non-volatile memory device and non-volatile memory device using the same
SAMSUNG ELECTRONICS CO LTD5 citations83
US9007839B2Apr 14, 2015
Nonvolatile memory device performing read operation with variable read voltage
SAMSUNG ELECTRONICS CO LTD4 citations73
US10169227B2Jan 1, 2019
Memory controller and memory system including the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US9183924B2Nov 10, 2015
Methods of operating nonvolatile memory devices that support efficient error detection
SAMSUNG ELECTRONICS CO LTD2 citations62
US9064581B2Jun 23, 2015
Method of programming non-volatile memory device and non-volatile memory device using the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US12277995B2Apr 15, 2025
Page buffer circuit and memory device including the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US9384803B2Jul 5, 2016
Storage device and latch management method thereof
SAMSUNG ELECTRONICS CO LTD0 citations50
INTEL CORP
6 patentsUS10204794B2Feb 12, 2019
Advanced etching technologies for straight, tall and uniform fins across multiple fin pitch structures
INTEL CORP3 citations71
US12131912B2Oct 29, 2024
Advanced etching technologies for straight, tall and uniform fins across multiple fin pitch structures
INTEL CORP0 citations60
US11875999B2Jan 16, 2024
Advanced etching technologies for straight, tall and uniform fins across multiple fin pitch structures
INTEL CORP0 citations60
US11417531B2Aug 16, 2022
Advanced etching technologies for straight, tall and uniform fins across multiple fin pitch structures
INTEL CORP0 citations60
US10950453B2Mar 16, 2021
Advanced etching technologies for straight, tall and uniform fins across multiple fin pitch structures
INTEL CORP0 citations60
US10643855B2May 5, 2020
Advanced etching technologies for straight, tall and uniform fins across multiple fin pitch structures
INTEL CORP0 citations50