Inventor
PARKIN STUART STEPHEN PAPWORTH
US65 patents
⚠️ This page may combine multiple inventors who share the name “PARKIN STUART STEPHEN PAPWORTH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
47 patentsUS7230265B2Jun 12, 2007
Spin-polarization devices using rare earth-transition metal alloys
IBM163 citations99
US6166948ADec 26, 2000
Magnetic memory array with magnetic tunnel junction memory cells having flux-closed free layers
IBM386 citations99
US6023395AFeb 8, 2000
Magnetic tunnel junction magnetoresistive sensor with in-stack biasing
IBM235 citations99
US5966012AOct 12, 1999
Magnetic tunnel junction device with improved fixed and free ferromagnetic layers
IBM154 citations99
US5898548AApr 27, 1999
Shielded magnetic tunnel junction magnetoresistive read head
IBM190 citations99
US5841692ANov 24, 1998
Magnetic tunnel junction device with antiferromagnetically coupled pinned layer
IBM261 citations99
US5801984ASep 1, 1998
Magnetic tunnel junction device with ferromagnetic multilayer having fixed magnetic moment
IBM175 citations99
US5764567AJun 9, 1998
Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response
IBM262 citations99
US5729410AMar 17, 1998
Magnetic tunnel junction device with longitudinal biasing
IBM284 citations99
US5650958AJul 22, 1997
Magnetic tunnel junctions with controlled magnetic response
IBM521 citations99
US7602000B2Oct 13, 2009
Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
IBM58 citations98
US7443639B2Oct 28, 2008
Magnetic tunnel junctions including crystalline and amorphous tunnel barrier materials
IBM64 citations98
US7313013B2Dec 25, 2007
Spin-current switchable magnetic memory element and method of fabricating the memory element
IBM63 citations98
US7274080B1Sep 25, 2007
MgO-based tunnel spin injectors
IBM103 citations98
US7270896B2Sep 18, 2007
High performance magnetic tunnel barriers with amorphous materials
IBM73 citations98
US7252852B1Aug 7, 2007
Mg-Zn oxide tunnel barriers and method of formation
IBM115 citations98
US6331944B1Dec 18, 2001
Magnetic random access memory using a series tunnel element select mechanism
IBM160 citations98
US6269018B1Jul 31, 2001
Magnetic random access memory using current through MTJ write mechanism
IBM172 citations98
US6226160B1May 1, 2001
Small area magnetic tunnel junction devices with low resistance and high magnetoresistance
IBM86 citations98
US5936293AAug 10, 1999
Hard/soft magnetic tunnel junction device with stable hard ferromagnetic layer
IBM93 citations98
US5901018AMay 4, 1999
Magnetic tunnel junction magnetoresistive read head with sensing layer as rear flux guide
IBM110 citations98
US5898547AApr 27, 1999
Magnetic tunnel junction magnetoresistive read head with sensing layer as flux guide
IBM150 citations98
US5640343AJun 17, 1997
Magnetic memory array using magnetic tunnel junction devices in the memory cells
IBM1,220 citations98
US6114719ASep 5, 2000
Magnetic tunnel junction memory cell with in-stack biasing of the free ferromagnetic layer and memory array using the cell
IBM213 citations97
US7276384B2Oct 2, 2007
Magnetic tunnel junctions with improved tunneling magneto-resistance
IBM57 citations96
US6650513B2Nov 18, 2003
Magnetic devices with a ferromagnetic layer having perpendicular magnetic anisotropy and an antiferromagnetic layer for perpendicularly exchange biasing the ferromagnetic layer
IBM72 citations96
US6359289B1Mar 19, 2002
Magnetic tunnel junction device with improved insulating tunnel barrier
IBM58 citations96
US6153320ANov 28, 2000
Magnetic devices with laminated ferromagnetic structures formed with improved antiferromagnetically coupling films
IBM61 citations96
US8008097B2Aug 30, 2011
MgO tunnel barriers and method of formation
IBM20 citations93
US7906231B2Mar 15, 2011
Magnetic tunnel barriers and associated magnetic tunnel junctions with high tunneling magnetoresistance
IBM17 citations93
US7807218B2Oct 5, 2010
High performance magnetic tunnel barriers with amorphous materials
IBM20 citations93
US7666467B2Feb 23, 2010
Magnetic tunnel junctions using amorphous materials as reference and free layers
IBM23 citations93
US7606010B2Oct 20, 2009
Mg-Zn oxide tunnel barriers and method of formation
IBM19 citations93
US7570463B2Aug 4, 2009
Magnetic tunnel junctions including crystalline and amorphous tunnel barrier materials
IBM31 citations93
US7551469B1Jun 23, 2009
Unidirectional racetrack memory device
IBM48 citations93
US7357995B2Apr 15, 2008
Magnetic tunnel barriers and associated magnetic tunnel junctions with high tunneling magnetoresistance
IBM16 citations93
US7349187B2Mar 25, 2008
Tunnel barriers based on alkaline earth oxides
IBM39 citations93
US7149105B2Dec 12, 2006
Magnetic tunnel junctions for MRAM devices
IBM47 citations92
US6515897B1Feb 4, 2003
Magnetic random access memory using a non-linear memory element select mechanism
IBM32 citations92
US6326637B1Dec 4, 2001
Antiferromagnetically exchange-coupled structure for magnetic tunnel junction device
IBM50 citations92
US6197439B1Mar 6, 2001
Laminated magnetic structures with ultra-thin transition metal spacer layers
IBM22 citations91
US7894245B2Feb 22, 2011
Spin-current switchable magnetic memory element and method of fabricating the memory element
IBM9 citations84
US7534626B2May 19, 2009
MgO-based tunnel spin injectors
IBM12 citations84
US7531830B2May 12, 2009
Spin-polarization devices using rare earth-transition metal alloys
IBM12 citations84
US7345855B2Mar 18, 2008
Tunnel barriers based on rare earth element oxides
IBM18 citations84
US7943399B2May 17, 2011
Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
IBM4 citations74
US6088204AJul 11, 2000
Magnetoresistive magnetic recording head with permalloy sensor layer deposited with substrate heating
IBM15 citations73
PARKIN STUART STEPHEN PAPWORTH
1 patentJIANG XIN
1 patentSAMSUNG ELECTRONICS CO LTD
1 patentShowing the top 50 of 65 patents by PatentIndex Score.