Inventor

THOMAS LUC

US40 patents

⚠️ This page may combine multiple inventors who share the name “THOMAS LUC”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

THOMAS LUC

TAIWAN SEMICONDUCTOR MFG CO LTD

Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)

Dual magnetic tunnel junction (DMTJ) stack design

Perpendicularly magnetized ferromagnetic layers having an oxide interface allowing for improved control of oxidation

Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy

Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy

Perpendicularly magnetized ferromagnetic layers having an oxide interface allowing for improved control of oxidation

Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)

Multilayer structure for reducing film roughness in magnetic devices

Dual magnetic tunnel junction (DMTJ) stack design

Method for measuring saturation magnetization of magnetic films and multilayer stacks

Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)

Ferromagnetic resonance (FMR) electrical testing apparatus for spintronic devices

Multi-probe ferromagnetic resonance (FMR) apparatus for wafer level characterization of magnetic films

Scanning ferromagnetic resonance (FMR) for wafer-level characterization of magnetic films and multilayers

Method for measuring saturation magnetization of magnetic films and multilayer stacks

Multi-probe ferromagnetic resonance (FMR) apparatus for wafer level characterization of magnetic films

Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anistropy

Scanning ferromagnetic resonance (FMR) for wafer-level characterization of magnetic films and multilayers

Ferromagnetic resonance (FMR) electrical testing apparatus for spintronic devices

HEADWAY TECH INC

Perpendicular magnetic recording (PMR) write shield design with minimized wide adjacent track erasure (WATE)

Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealing

Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy

Multilayer structure for reducing film roughness in magnetic devices

Minimal thickness, low switching voltage magnetic free layers using an oxidation control layer and magnetic moment tuning layer for spintronic applications

Nitride diffusion barrier structure for spintronic applications

Nitride diffusion barrier structure for spintronic applications

Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio

Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio

Integration scheme for three terminal spin-orbit-torque (SOT) switching devices

IBM

Magnetic memory array with magnetic tunnel junction memory cells having flux-closed free layers

Magnetic racetrack with current-controlled motion of domain walls within an undulating energy landscape

Magnetic racetrack with current-controlled motion of domain walls within an undulating energy landscape

Sequence of current pulses for depinning magnetic domain walls

Sequence of current pulses for depinning magnetic domain walls

Multiple bit nonvolatile memory based on current induced domain wall motion in a nanowire magnetic tunnel junction

Multiple bit nonvolatile memory based on current induced domain wall motion in a nanowire magnetic tunnel junction

Method and apparatus for controlled application of Oersted field to magnetic memory structure

PARKIN STUART STEPHEN PAPWORTH

Domain wall motion in perpendicularly magnetized wires having artificial antiferromagnetically coupled multilayers with engineered interfaces

Domain wall motion in perpendicularly magnetized wires having magnetic multilayers with engineered interfaces

CIT ALCATEL

Digital generator for producing a sinewave