Inventor
YANG SEE-HUN
US10 patents
⚠️ This page may combine multiple inventors who share the name “YANG SEE-HUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
4 patentsUS9853205B1Dec 26, 2017
Spin transfer torque magnetic tunnel junction with off-centered current flow
IBM6 citations83
US11177432B2Nov 16, 2021
Heusler-alloy and ferrimagnet based magnetic domain-wall devices for artificial neural network applications
IBM2 citations71
US12274179B2Apr 8, 2025
Seed layer for enhancing tunnel magnetoresistance with perpendicularly magnetized Heusler films
IBM0 citations60
US10109786B2Oct 23, 2018
Spin transfer torque magnetic tunnel junction with off-centered current flow
IBM1 citations51
SAMSUNG ELECTRONICS CO LTD
3 patentsUS12094508B1Sep 17, 2024
Magnetic tunneling junction switching with parallel spin-momentum locked spin current
SAMSUNG ELECTRONICS CO LTD0 citations58
US12457908B2Oct 28, 2025
Magnetic memory devices
SAMSUNG ELECTRONICS CO LTD0 citations56
US12588425B2Mar 24, 2026
Systems, articles, and methods related to multilayered magnetic memory devices
SAMSUNG ELECTRONICS CO LTD0 citations46
PARKIN STUART STEPHEN PAPWORTH
2 patentsUS8687415B2Apr 1, 2014
Domain wall motion in perpendicularly magnetized wires having artificial antiferromagnetically coupled multilayers with engineered interfaces
PARKIN STUART STEPHEN PAPWORTH37 citations91
US8638601B1Jan 28, 2014
Domain wall motion in perpendicularly magnetized wires having magnetic multilayers with engineered interfaces
PARKIN STUART STEPHEN PAPWORTH2 citations60