Inventor
EUN YONG SEOK
KR22 patents
⚠️ This page may combine multiple inventors who share the name “EUN YONG SEOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HYNIX SEMICONDUCTOR INC
8 patentsUS7589012B1Sep 15, 2009
Method for fabricating semiconductor memory device
HYNIX SEMICONDUCTOR INC14 citations82
US8049199B2Nov 1, 2011
Phase change memory device and method for manufacturing the same
HYNIX SEMICONDUCTOR INC6 citations62
US7563673B2Jul 21, 2009
Method of forming gate structure of semiconductor device
HYNIX SEMICONDUCTOR INC2 citations62
US7723189B2May 25, 2010
Method for manufacturing semiconductor device having recess gate
HYNIX SEMICONDUCTOR INC4 citations61
US7859041B2Dec 28, 2010
Gate structure of semiconductor device
HYNIX SEMICONDUCTOR INC0 citations51
US6949480B2Sep 27, 2005
Method for depositing silicon nitride layer of semiconductor device
HYNIX SEMICONDUCTOR INC1 citations51
US7851298B2Dec 14, 2010
Method for fabricating transistor in a semiconductor device utilizing an etch stop layer pattern as a dummy pattern for the gate electrode formation
HYNIX SEMICONDUCTOR INC0 citations50
US6974745B2Dec 13, 2005
Method of manufacturing semiconductor device
HYNIX SEMICONDUCTOR INC0 citations41
SK HYNIX INC
6 patentsUS9236263B2Jan 12, 2016
Method for fabricating semiconductor device including silicon-containing layer and metal-containing layer, and conductive structure of the same
SK HYNIX INC3 citations71
US9368586B2Jun 14, 2016
Transistor with recess gate and method for fabricating the same
SK HYNIX INC2 citations62
US9418891B2Aug 16, 2016
Method for fabricating semiconductor device including silicon-containing layer and metal-containing layer, and conductive structure of the same
SK HYNIX INC0 citations51
US8912064B2Dec 16, 2014
Method for forming impurity region of vertical transistor and method for fabricating vertical transistor using the same
SK HYNIX INC0 citations51
US8859370B2Oct 14, 2014
Method for forming impurity region of vertical transistor and method for fabricating vertical transistor using the same
SK HYNIX INC0 citations51
US9553159B2Jan 24, 2017
Semiconductor devices having polysilicon gate patterns and methods of fabricating the same
SK HYNIX INC1 citations50
ROUH KYONG BONG
2 patentsUS8481431B2Jul 9, 2013
Method for opening one-side contact region of vertical transistor and method for fabricating one-side junction region using the same
ROUH KYONG BONG4 citations58
US8470664B2Jun 25, 2013
Methods of fabricating a dual polysilicon gate and methods of fabricating a semiconductor device using the same
ROUH KYONG BONG0 citations36