Inventor
HIROSE RYAN T
US31 patents
⚠️ This page may combine multiple inventors who share the name “HIROSE RYAN T”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CYPRESS SEMICONDUCTOR CORP
14 patentsUS6614070B1Sep 2, 2003
Semiconductor non-volatile memory device having a NAND cell structure
CYPRESS SEMICONDUCTOR CORP178 citations99
US6163048ADec 19, 2000
Semiconductor non-volatile memory device having a NAND cell structure
CYPRESS SEMICONDUCTOR CORP424 citations99
US6363011B1Mar 26, 2002
Semiconductor non-volatile latch device including non-volatile elements
CYPRESS SEMICONDUCTOR CORP102 citations98
US6122191ASep 19, 2000
Semiconductor non-volatile device including embedded non-volatile elements
CYPRESS SEMICONDUCTOR CORP72 citations96
US7969804B1Jun 28, 2011
Memory architecture having a reference current generator that provides two reference currents
CYPRESS SEMICONDUCTOR CORP25 citations91
US9431124B2Aug 30, 2016
Method to reduce program disturbs in non-volatile memory cells
CYPRESS SEMICONDUCTOR CORP7 citations84
US8988938B2Mar 24, 2015
Method to reduce program disturbs in non-volatile memory cells
CYPRESS SEMICONDUCTOR CORP6 citations84
US8675405B1Mar 18, 2014
Method to reduce program disturbs in non-volatile memory cells
CYPRESS SEMICONDUCTOR CORP11 citations84
US10262747B2Apr 16, 2019
Method to reduce program disturbs in non-volatile memory cells
CYPRESS SEMICONDUCTOR CORP2 citations73
US9847137B2Dec 19, 2017
Method to reduce program disturbs in non-volatile memory cells
CYPRESS SEMICONDUCTOR CORP2 citations73
US6590420B1Jul 8, 2003
Level shifting circuit and method
CYPRESS SEMICONDUCTOR CORP12 citations72
US6654309B1Nov 25, 2003
Circuit and method for reducing voltage stress in a memory decoder
CYPRESS SEMICONDUCTOR CORP6 citations63
US7012456B1Mar 14, 2006
Circuit and method for discharging high voltage signals
CYPRESS SEMICONDUCTOR CORP6 citations61
US9129686B2Sep 8, 2015
Systems and methods for providing high voltage to memory devices
CYPRESS SEMICONDUCTOR CORP0 citations48
NVX CORP
8 patentsUS5789776AAug 4, 1998
Single poly memory cell and array
NVX CORP274 citations98
US5644533AJul 1, 1997
Flash memory system, and methods of constructing and utilizing same
NVX CORP101 citations97
US5892712AApr 6, 1999
Semiconductor non-volatile latch device including embedded non-volatile elements
NVX CORP78 citations96
US5774400AJun 30, 1998
Structure and method to prevent over erasure of nonvolatile memory transistors
NVX CORP73 citations96
US5760644AJun 2, 1998
Integrated circuit timer function using natural decay of charge stored in a dielectric
NVX CORP61 citations96
US5656837AAug 12, 1997
Flash memory system, and methods of constructing and utilizing same
NVX CORP47 citations96
US5506816AApr 9, 1996
Memory cell array having compact word line arrangement
NVX CORP60 citations96
US5510638AApr 23, 1996
Field shield isolated EPROM
NVX CORP32 citations92
HIROSE RYAN T
5 patentsUS8125835B2Feb 28, 2012
Memory architecture having two independently controlled voltage pumps
HIROSE RYAN T13 citations90
US8542541B2Sep 24, 2013
Memory architecture having two independently controlled voltage pumps
HIROSE RYAN T9 citations82
US8570809B2Oct 29, 2013
Flash memory devices and systems
HIROSE RYAN T8 citations81
US8750051B1Jun 10, 2014
Systems and methods for providing high voltage to memory devices
HIROSE RYAN T5 citations79
US9007843B2Apr 14, 2015
Internal data compare for memory verification
HIROSE RYAN T0 citations43