Inventor
SEO DONG SOO
KR19 patents
⚠️ This page may combine multiple inventors who share the name “SEO DONG SOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRO MECH
17 patentsUS8653628B1Feb 18, 2014
Power semiconductor device and method of manufacturing the same
SAMSUNG ELECTRO MECH10 citations83
US9627470B2Apr 18, 2017
Power semiconductor device and method of manufacturing the same
SAMSUNG ELECTRO MECH2 citations72
US9263560B2Feb 16, 2016
Power semiconductor device having reduced gate-collector capacitance
SAMSUNG ELECTRO MECH3 citations68
US9356116B2May 31, 2016
Power semiconductor device and method of fabricating the same
SAMSUNG ELECTRO MECH0 citations52
US8742452B2Jun 3, 2014
Semiconductor device and method for manufacturing semiconductor device
SAMSUNG ELECTRO MECH0 citations52
US9245986B2Jan 26, 2016
Power semiconductor device and method of manufacturing the same
SAMSUNG ELECTRO MECH1 citations51
US9196702B2Nov 24, 2015
Power semiconductor device and method of manufacturing the same
SAMSUNG ELECTRO MECH0 citations51
US9147757B2Sep 29, 2015
Power semiconductor device and method for manufacturing the same
SAMSUNG ELECTRO MECH0 citations51
US9076811B2Jul 7, 2015
Power semiconductor device and method of manufacturing the same
SAMSUNG ELECTRO MECH0 citations51
US8981423B2Mar 17, 2015
Power semiconductor device and method of fabricating the same
SAMSUNG ELECTRO MECH1 citations51
US9502498B2Nov 22, 2016
Power semiconductor device
SAMSUNG ELECTRO MECH0 citations49
US9209287B2Dec 8, 2015
Power semiconductor device
SAMSUNG ELECTRO MECH0 citations48
US9281389B2Mar 8, 2016
Semiconductor device
SAMSUNG ELECTRO MECH0 citations41
US9318589B2Apr 19, 2016
Insulated gate bipolar transistor
SAMSUNG ELECTRO MECH0 citations40
US9184247B2Nov 10, 2015
Power semiconductor device capable of maintaining a withstand voltage
SAMSUNG ELECTRO MECH0 citations40
US9153678B2Oct 6, 2015
Power semiconductor device and method of manufacturing the same
SAMSUNG ELECTRO MECH0 citations40
US9252212B2Feb 2, 2016
Power semiconductor device
SAMSUNG ELECTRO MECH0 citations39