Inventor
HOWER PHILIP L
US43 patents
⚠️ This page may combine multiple inventors who share the name “HOWER PHILIP L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TEXAS INSTRUMENTS INC
29 patentsUS7268045B2Sep 11, 2007
N-channel LDMOS with buried P-type region to prevent parasitic bipolar effects
TEXAS INSTRUMENTS INC66 citations98
US6958515B2Oct 25, 2005
N-channel LDMOS with buried p-type region to prevent parasitic bipolar effects
TEXAS INSTRUMENTS INC84 citations98
US9349933B2May 24, 2016
Vertical thermoelectric structures
TEXAS INSTRUMENTS INC6 citations84
US8643099B2Feb 4, 2014
Integrated lateral high voltage MOSFET
TEXAS INSTRUMENTS INC7 citations84
US6624481B1Sep 23, 2003
ESD robust bipolar transistor with high variable trigger and sustaining voltages
TEXAS INSTRUMENTS INC17 citations84
US7195965B2Mar 27, 2007
Premature breakdown in submicron device geometries
TEXAS INSTRUMENTS INC14 citations83
US7417270B2Aug 26, 2008
Distributed high voltage JFET
TEXAS INSTRUMENTS INC9 citations82
US7262109B2Aug 28, 2007
Integrated circuit having a transistor level top side wafer contact and a method of manufacture therefor
TEXAS INSTRUMENTS INC15 citations82
US7846789B2Dec 7, 2010
Isolation trench with rounded corners for BiCMOS process
TEXAS INSTRUMENTS INC6 citations74
US6815276B2Nov 9, 2004
Segmented power MOSFET of safe operation
TEXAS INSTRUMENTS INC10 citations74
US11152459B2Oct 19, 2021
Lateral MOSFET with buried drain extension layer
TEXAS INSTRUMENTS INC1 citations73
US9985095B2May 29, 2018
Lateral MOSFET with buried drain extension layer
TEXAS INSTRUMENTS INC3 citations73
US9843322B2Dec 12, 2017
Integrated high-side driver for P-N bimodal power device
TEXAS INSTRUMENTS INC2 citations73
US10937905B2Mar 2, 2021
Transistor having double isolation with one floating isolation
TEXAS INSTRUMENTS INC2 citations72
US7605412B2Oct 20, 2009
Distributed high voltage JFET
TEXAS INSTRUMENTS INC7 citations72
US9397211B2Jul 19, 2016
Lateral MOSFET with buried drain extension layer
TEXAS INSTRUMENTS INC1 citations63
US9087708B2Jul 21, 2015
IC with floating buried layer ring for isolation of embedded islands
TEXAS INSTRUMENTS INC2 citations63
US7989853B2Aug 2, 2011
Integration of high voltage JFET in linear bipolar CMOS process
TEXAS INSTRUMENTS INC3 citations63
US7187034B2Mar 6, 2007
Distributed power MOSFET
TEXAS INSTRUMENTS INC3 citations63
US6878999B2Apr 12, 2005
Transistor with improved safe operating area
TEXAS INSTRUMENTS INC6 citations63
US7345343B2Mar 18, 2008
Integrated circuit having a top side wafer contact and a method of manufacture therefor
TEXAS INSTRUMENTS INC4 citations61
US7736961B2Jun 15, 2010
High voltage depletion FET employing a channel stopping implant
TEXAS INSTRUMENTS INC3 citations60
US10601422B2Mar 24, 2020
Integrated high-side driver for P-N bimodal power device
TEXAS INSTRUMENTS INC0 citations52
US10535731B2Jan 14, 2020
Lateral MOSFET with buried drain extension layer
TEXAS INSTRUMENTS INC0 citations52
US10446734B2Oct 15, 2019
Vertical thermoelectric structures
TEXAS INSTRUMENTS INC0 citations52
US10319809B2Jun 11, 2019
Structures to avoid floating resurf layer in high voltage lateral devices
TEXAS INSTRUMENTS INC0 citations52
US9876071B2Jan 23, 2018
Structures to avoid floating RESURF layer in high voltage lateral devices
TEXAS INSTRUMENTS INC0 citations52
US7910417B2Mar 22, 2011
Distributed high voltage JFET
TEXAS INSTRUMENTS INC0 citations50
US7741205B2Jun 22, 2010
Integrated circuit having a top side wafer contact and a method of manufacture therefor
TEXAS INSTRUMENTS INC0 citations50
UNITRODE CORP
3 patentsDENISON MARIE
3 patentsUS8853029B2Oct 7, 2014
Method of making vertical transistor with graded field plate dielectric
DENISON MARIE5 citations73
US8476127B2Jul 2, 2013
Integrated lateral high voltage MOSFET
DENISON MARIE2 citations63
US9806190B2Oct 31, 2017
High voltage drain extension on thin buried oxide SOI
DENISON MARIE0 citations42