P

Inventor

HOWER PHILIP L

US43 patents
⚠️ This page may combine multiple inventors who share the name “HOWER PHILIP L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TEXAS INSTRUMENTS INC

29 patents
US7268045B2Sep 11, 2007

N-channel LDMOS with buried P-type region to prevent parasitic bipolar effects

TEXAS INSTRUMENTS INC66 citations98
US6958515B2Oct 25, 2005

N-channel LDMOS with buried p-type region to prevent parasitic bipolar effects

TEXAS INSTRUMENTS INC84 citations98
US9349933B2May 24, 2016

Vertical thermoelectric structures

TEXAS INSTRUMENTS INC6 citations84
US8643099B2Feb 4, 2014

Integrated lateral high voltage MOSFET

TEXAS INSTRUMENTS INC7 citations84
US6624481B1Sep 23, 2003

ESD robust bipolar transistor with high variable trigger and sustaining voltages

TEXAS INSTRUMENTS INC17 citations84
US7195965B2Mar 27, 2007

Premature breakdown in submicron device geometries

TEXAS INSTRUMENTS INC14 citations83
US7417270B2Aug 26, 2008

Distributed high voltage JFET

TEXAS INSTRUMENTS INC9 citations82
US7262109B2Aug 28, 2007

Integrated circuit having a transistor level top side wafer contact and a method of manufacture therefor

TEXAS INSTRUMENTS INC15 citations82
US7846789B2Dec 7, 2010

Isolation trench with rounded corners for BiCMOS process

TEXAS INSTRUMENTS INC6 citations74
US6815276B2Nov 9, 2004

Segmented power MOSFET of safe operation

TEXAS INSTRUMENTS INC10 citations74
US11152459B2Oct 19, 2021

Lateral MOSFET with buried drain extension layer

TEXAS INSTRUMENTS INC1 citations73
US9985095B2May 29, 2018

Lateral MOSFET with buried drain extension layer

TEXAS INSTRUMENTS INC3 citations73
US9843322B2Dec 12, 2017

Integrated high-side driver for P-N bimodal power device

TEXAS INSTRUMENTS INC2 citations73
US10937905B2Mar 2, 2021

Transistor having double isolation with one floating isolation

TEXAS INSTRUMENTS INC2 citations72
US7605412B2Oct 20, 2009

Distributed high voltage JFET

TEXAS INSTRUMENTS INC7 citations72
US9397211B2Jul 19, 2016

Lateral MOSFET with buried drain extension layer

TEXAS INSTRUMENTS INC1 citations63
US9087708B2Jul 21, 2015

IC with floating buried layer ring for isolation of embedded islands

TEXAS INSTRUMENTS INC2 citations63
US7989853B2Aug 2, 2011

Integration of high voltage JFET in linear bipolar CMOS process

TEXAS INSTRUMENTS INC3 citations63
US7187034B2Mar 6, 2007

Distributed power MOSFET

TEXAS INSTRUMENTS INC3 citations63
US6878999B2Apr 12, 2005

Transistor with improved safe operating area

TEXAS INSTRUMENTS INC6 citations63
US7345343B2Mar 18, 2008

Integrated circuit having a top side wafer contact and a method of manufacture therefor

TEXAS INSTRUMENTS INC4 citations61
US7736961B2Jun 15, 2010

High voltage depletion FET employing a channel stopping implant

TEXAS INSTRUMENTS INC3 citations60
US10601422B2Mar 24, 2020

Integrated high-side driver for P-N bimodal power device

TEXAS INSTRUMENTS INC0 citations52
US10535731B2Jan 14, 2020

Lateral MOSFET with buried drain extension layer

TEXAS INSTRUMENTS INC0 citations52
US10446734B2Oct 15, 2019

Vertical thermoelectric structures

TEXAS INSTRUMENTS INC0 citations52
US10319809B2Jun 11, 2019

Structures to avoid floating resurf layer in high voltage lateral devices

TEXAS INSTRUMENTS INC0 citations52
US9876071B2Jan 23, 2018

Structures to avoid floating RESURF layer in high voltage lateral devices

TEXAS INSTRUMENTS INC0 citations52
US7910417B2Mar 22, 2011

Distributed high voltage JFET

TEXAS INSTRUMENTS INC0 citations50
US7741205B2Jun 22, 2010

Integrated circuit having a top side wafer contact and a method of manufacture therefor

TEXAS INSTRUMENTS INC0 citations50

UNITRODE CORP

3 patents

DENISON MARIE

3 patents

WESTINGHOUSE ELECTRIC CORP

2 patents

KAWAHARA HIDEAKI

2 patents

MALE BARRY JON

1 patent

ELECTRIC POWER RES INST

1 patent

PENDHARKAR SAMEER P

1 patent

HOWER PHILIP L

1 patent