Inventor
NAM PHIL OUK
KR44 patents
⚠️ This page may combine multiple inventors who share the name “NAM PHIL OUK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
29 patentsUS9076879B2Jul 7, 2015
Three-dimensional semiconductor memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD39 citations97
US9130054B2Sep 8, 2015
Semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD29 citations93
US10395982B2Aug 27, 2019
Three-dimensional semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD6 citations84
US9431416B2Aug 30, 2016
Vertical-type nonvolatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US10403641B2Sep 3, 2019
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD8 citations83
US9905568B2Feb 27, 2018
Nonvolatile memory device and a method for fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations83
US9899411B2Feb 20, 2018
Three-dimensional semiconductor memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations83
US9893077B2Feb 13, 2018
Memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD9 citations82
US9716181B2Jul 25, 2017
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations79
US10727115B2Jul 28, 2020
Three-dimensional semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations73
US11532639B2Dec 20, 2022
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations72
US10756185B2Aug 25, 2020
Semiconductor device including vertical channel layer and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations72
US10629609B2Apr 21, 2020
Three dimensional semiconductor device and method of forming the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US10263006B2Apr 16, 2019
Semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD5 citations72
US9559111B2Jan 31, 2017
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD3 citations72
US11910614B2Feb 20, 2024
Three dimensional semiconductor device and method of forming the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US11737277B2Aug 22, 2023
Vertical memory device with a channel layer in a stacked dielectric layer
SAMSUNG ELECTRONICS CO LTD0 citations62
US11296104B2Apr 5, 2022
Three dimensional semiconductor device and method of forming the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US11282856B2Mar 22, 2022
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11189636B2Nov 30, 2021
Vertical memory device with a channel layer in a stacked dielectric layer
SAMSUNG ELECTRONICS CO LTD0 citations62
US10892278B2Jan 12, 2021
Three-dimensional semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US10396094B2Aug 27, 2019
Three-dimensional semiconductor devices
SAMSUNG ELECTRONICS CO LTD1 citations62
US12546004B2Feb 10, 2026
Semiconductor manufacturing apparatus
SAMSUNG ELECTRONICS CO LTD0 citations61
US11913114B2Feb 27, 2024
Semiconductor manufacturing apparatus
SAMSUNG ELECTRONICS CO LTD1 citations61
US10651191B2May 12, 2020
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US10651194B2May 12, 2020
Semiconductor device including dielectric layer
SAMSUNG ELECTRONICS CO LTD0 citations52
US10090323B2Oct 2, 2018
Semiconductor device including dielectric layer
SAMSUNG ELECTRONICS CO LTD0 citations52
US10109747B2Oct 23, 2018
Semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US10103163B2Oct 16, 2018
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD1 citations49
NAM PHIL-OUK
5 patentsUS9324730B2Apr 26, 2016
Vertical memory devices and methods of manufacturing the same
NAM PHIL-OUK26 citations93
US8987805B2Mar 24, 2015
Vertical type semiconductor devices including oxidation target layers
NAM PHIL-OUK25 citations92
US9461061B2Oct 4, 2016
Vertical memory devices and methods of manufacturing the same
NAM PHIL-OUK6 citations72
US9871055B1Jan 16, 2018
Vertical-type memory device
NAM PHIL-OUK1 citations51
US9082659B1Jul 14, 2015
Methods of forming vertical type semiconductor devices including oxidation target layers
NAM PHIL-OUK1 citations51