P

Inventor

SUZUKI MASAKATSU

JP46 patents
⚠️ This page may combine multiple inventors who share the name “SUZUKI MASAKATSU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

16 patents
US6399970B2Jun 4, 2002

FET having a Si/SiGeC heterojunction channel

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD279 citations99
US6190975B1Feb 20, 2001

Method of forming HCMOS devices with a silicon-germanium-carbon compound semiconductor layer

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD230 citations99
US6720586B1Apr 13, 2004

Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD98 citations98
US6614059B1Sep 2, 2003

Semiconductor light-emitting device with quantum well

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD91 citations98
US6674100B2Jan 6, 2004

SiGeC-based CMOSFET with separate heterojunctions

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD58 citations96
US5787104AJul 28, 1998

Semiconductor light emitting element and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD75 citations96
US6911351B2Jun 28, 2005

Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD22 citations93
US7368766B2May 6, 2008

Semiconductor light emitting element and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations92
US6861672B2Mar 1, 2005

Semiconductor light emitting element and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD18 citations92
US6326638B1Dec 4, 2001

Semiconductor light emitting element and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD32 citations92
US6798811B1Sep 28, 2004

Semiconductor laser device, method for fabricating the same, and optical disk apparatus

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD18 citations90
US7212556B1May 1, 2007

Semiconductor laser device optical disk apparatus and optical integrated unit

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations84
US7092423B2Aug 15, 2006

Semiconductor laser device, optical disk apparatus and optical integrated unit

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD10 citations74
US6940100B2Sep 6, 2005

Group III-V nitride semiconductor light-emitting device which allows for efficient injection of electrons into an active layer

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations74
US7426227B2Sep 16, 2008

Semiconductor laser device, optical disk apparatus and optical integrated unit

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3 citations63
US7292615B2Nov 6, 2007

Semiconductor laser device, method for fabricating the same, and optical disk apparatus

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations60

MITSUBISHI ELECTRIC CORP

14 patents

TOYODA AUTOMATIC LOOM WORKS

6 patents

HITACHI CHEMICAL CO LTD

2 patents

RENESAS ELECTRONICS CORP

2 patents

HITACHI LTD

1 patent

HITACHI CHEMICAL COMPANY INC

1 patent

(unassigned)

1 patent

THREE BOND CO LTD

1 patent

PANASONIC CORP

1 patent

TOWERJAZZ PANASONIC SEMICONDUCTOR CO LTD

1 patent