Inventor
YANG HAN-JEN
TW17 patents
⚠️ This page may combine multiple inventors who share the name “YANG HAN-JEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
14 patentsUS9876005B2Jan 23, 2018
SCRS with checker board layouts
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9728531B2Aug 8, 2017
Electrostatic discharge device
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10854595B2Dec 1, 2020
Electrostatic discharge device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10777546B2Sep 15, 2020
Planar and non-planar FET-based electrostatic discharge protection devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9812436B2Nov 7, 2017
SCRs with checker board layouts
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9583481B2Feb 28, 2017
Semiconductor device comprising plurality of conductive portions disposed within wells and a nanowire coupled to conductive portion
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12051691B2Jul 30, 2024
Planar and non-planar FET-based electrostatic discharge protection devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11380673B2Jul 5, 2022
Electrostatic discharge device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10790274B2Sep 29, 2020
SCRs with checker board layouts
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10157905B2Dec 18, 2018
Electrostatic discharge device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9559095B2Jan 31, 2017
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US10546850B2Jan 28, 2020
FinFET-based ESD devices and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10163894B2Dec 25, 2018
FinFET-based ESD devices and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9893052B2Feb 13, 2018
FinFET-based ESD devices and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51