Inventor
NAM JU H
US3 patents
Patents
3 patentsUS11069795B2Jul 20, 2021
Transistors with channel and sub-channel regions with distinct compositions and dimensions
INTEL CORP1 citations61
US11056592B2Jul 6, 2021
Silicon substrate modification to enable formation of thin, relaxed, germanium-based layer
INTEL CORP1 citations60
US11404575B2Aug 2, 2022
Diverse transistor channel materials enabled by thin, inverse-graded, germanium-based layer
INTEL CORP0 citations50