Inventor

ISHIDA HIDEKUNI

JP5 patents

⚠️ This page may combine multiple inventors who share the name “ISHIDA HIDEKUNI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOKYO SHIBAURA ELECTRIC CO

3 patents

US4667218AMay 19, 1987

NPN transistor with base double doped with arsenic and boron

TOKYO SHIBAURA ELECTRIC CO6 citations73

US4263067AApr 21, 1981

Fabrication of transistors having specifically paired dopants

TOKYO SHIBAURA ELECTRIC CO10 citations73

US4155802AMay 22, 1979

Method of producing semiconductor device involving the use of silicon nitride as an oxidation mask

TOKYO SHIBAURA ELECTRIC CO4 citations57

TOSHIBA KK

1 patent

US4778772AOct 18, 1988

Method of manufacturing a bipolar transistor

TOSHIBA KK19 citations81

TAKAHASHI KOUICHI

1 patent

US4226650AOct 7, 1980

Method of reducing emitter dip in transistors utilizing specifically paired dopants

TAKAHASHI KOUICHI10 citations70