Inventor
TSAI KUAN-CHI
TW31 patents
⚠️ This page may combine multiple inventors who share the name “TSAI KUAN-CHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
19 patentsUS9761546B2Sep 12, 2017
Trap layer substrate stacking technique to improve performance for RF devices
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US9711521B2Jul 18, 2017
Substrate fabrication method to improve RF (radio frequency) device performance
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations71
US10515949B2Dec 24, 2019
Integrated circuit and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations70
US11121098B2Sep 14, 2021
Trap layer substrate stacking technique to improve performance for RF devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11121100B2Sep 14, 2021
Trap layer substrate stacking technique to improve performance for RF devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12162749B2Dec 10, 2024
Bond wave optimization method and device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11834332B2Dec 5, 2023
Bond wave optimization method and device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US9048287B1Jun 2, 2015
Mechanisms for forming semiconductor device structure with floating spacer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations61
US11264378B2Mar 1, 2022
Integrated circuit
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations60
US9865534B2Jan 9, 2018
Stress reduction apparatus
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations59
US9589831B2Mar 7, 2017
Mechanisms for forming radio frequency (RF) area of integrated circuit structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9230988B2Jan 5, 2016
Mechanisms for forming radio frequency (RF) area of integrated circuit structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12491536B2Dec 9, 2025
Semiconductor device and method of manufacturing same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US9799557B2Oct 24, 2017
Semiconductor device structure with metal ring on silicon-on-insulator (SOI) substrate
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations50
US10290576B2May 14, 2019
Stress reduction apparatus with an inverted cup-shaped layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48
US9362222B2Jun 7, 2016
Interconnection between inductor and metal-insulator-metal (MIM) capacitor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations46
US10153300B2Dec 11, 2018
Semiconductor device including a high-electron-mobility transistor (HEMT) and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations41
US10090327B2Oct 2, 2018
Semiconductor device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations40
US9543152B2Jan 10, 2017
MIM capacitors for leakage current improvement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations38
TAIWAN SEMICONDUCTOR MFG
7 patentsUS9373536B2Jun 21, 2016
Stress reduction apparatus
TAIWAN SEMICONDUCTOR MFG3 citations69
US8741732B2Jun 3, 2014
Forming metal-insulator-metal capacitors over a top metal layer
TAIWAN SEMICONDUCTOR MFG3 citations60
US9343352B2May 17, 2016
Integrated circuit using deep trench through silicon (DTS)
TAIWAN SEMICONDUCTOR MFG0 citations51
US8941211B2Jan 27, 2015
Integrated circuit using deep trench through silicon (DTS)
TAIWAN SEMICONDUCTOR MFG1 citations51
US8884441B2Nov 11, 2014
Process of ultra thick trench etch with multi-slope profile
TAIWAN SEMICONDUCTOR MFG1 citations47
US7846832B2Dec 7, 2010
Semiconductor device and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG0 citations45
US9184154B2Nov 10, 2015
Methods for fabricating integrated passive devices on glass substrates
TAIWAN SEMICONDUCTOR MFG0 citations40