P

Inventor

SEE ALEX

SG81 patents
⚠️ This page may combine multiple inventors who share the name “SEE ALEX”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHARTERED SEMICONDUCTOR MFG

37 patents
US6303418B1Oct 16, 2001

Method of fabricating CMOS devices featuring dual gate structures and a high dielectric constant gate insulator layer

CHARTERED SEMICONDUCTOR MFG374 citations99
US6261935B1Jul 17, 2001

Method of forming contact to polysilicon gate for MOS devices

CHARTERED SEMICONDUCTOR MFG216 citations99
US6406975B1Jun 18, 2002

Method for fabricating an air gap shallow trench isolation (STI) structure

CHARTERED SEMICONDUCTOR MFG84 citations97
US6380106B1Apr 30, 2002

Method for fabricating an air gap metallization scheme that reduces inter-metal capacitance of interconnect structures

CHARTERED SEMICONDUCTOR MFG84 citations97
US6348385B1Feb 19, 2002

Method for a short channel CMOS transistor with small overlay capacitance using in-situ doped spacers with a low dielectric constant

CHARTERED SEMICONDUCTOR MFG128 citations97
US6897118B1May 24, 2005

Method of multiple pulse laser annealing to activate ultra-shallow junctions

CHARTERED SEMICONDUCTOR MFG105 citations96
US6391731B1May 21, 2002

Activating source and drain junctions and extensions using a single laser anneal

CHARTERED SEMICONDUCTOR MFG59 citations96
US6365446B1Apr 2, 2002

Formation of silicided ultra-shallow junctions using implant through metal technology and laser annealing process

CHARTERED SEMICONDUCTOR MFG55 citations96
US6380084B1Apr 30, 2002

Method to form high performance copper damascene interconnects by de-coupling via and metal line filling

CHARTERED SEMICONDUCTOR MFG59 citations94
US7094669B2Aug 22, 2006

Structure and method of liner air gap formation

CHARTERED SEMICONDUCTOR MFG46 citations92
US6624489B2Sep 23, 2003

Formation of silicided shallow junctions using implant through metal technology and laser annealing process

CHARTERED SEMICONDUCTOR MFG25 citations92
US6613652B2Sep 2, 2003

Method for fabricating SOI devices with option of incorporating air-gap feature for better insulation and performance

CHARTERED SEMICONDUCTOR MFG28 citations92
US6387747B1May 14, 2002

Method to fabricate RF inductors with minimum area

CHARTERED SEMICONDUCTOR MFG57 citations92
US6355563B1Mar 12, 2002

Versatile copper-wiring layout design with low-k dielectric integration

CHARTERED SEMICONDUCTOR MFG46 citations92
US6319767B1Nov 20, 2001

Method to eliminate top metal corner shaping during bottom metal patterning for MIM capacitors via plasma ashing and hard masking technique

CHARTERED SEMICONDUCTOR MFG50 citations92
US6204137B1Mar 20, 2001

Method to form transistors and local interconnects using a silicon nitride dummy gate technique

CHARTERED SEMICONDUCTOR MFG44 citations92
US6335253B1Jan 1, 2002

Method to form MOS transistors with shallow junctions using laser annealing

CHARTERED SEMICONDUCTOR MFG49 citations91
US6281082B1Aug 28, 2001

Method to form MOS transistors with a common shallow trench isolation and interlevel dielectric gap fill

CHARTERED SEMICONDUCTOR MFG52 citations90
US6650220B2Nov 18, 2003

Parallel spiral stacked inductor on semiconductor material

CHARTERED SEMICONDUCTOR MFG27 citations89
US6475875B1Nov 5, 2002

Shallow trench isolation elevation uniformity via insertion of a polysilicon etch layer

CHARTERED SEMICONDUCTOR MFG27 citations89
US6391720B1May 21, 2002

Process flow for a performance enhanced MOSFET with self-aligned, recessed channel

CHARTERED SEMICONDUCTOR MFG38 citations87
US6468880B1Oct 22, 2002

Method for fabricating complementary silicon on insulator devices using wafer bonding

CHARTERED SEMICONDUCTOR MFG14 citations84
US6613649B2Sep 2, 2003

Method for buffer STI scheme with a hard mask layer as an oxidation barrier

CHARTERED SEMICONDUCTOR MFG16 citations83
US7585768B2Sep 8, 2009

Combined copper plating method to improve gap fill

CHARTERED SEMICONDUCTOR MFG14 citations82
US6905964B2Jun 14, 2005

Method of fabricating self-aligned metal barriers by atomic layer deposition on the copper layer

CHARTERED SEMICONDUCTOR MFG13 citations80
US6436833B1Aug 20, 2002

Method for pre-STI-CMP planarization using poly-si thermal oxidation

CHARTERED SEMICONDUCTOR MFG15 citations80
US7030451B2Apr 18, 2006

Method and apparatus for performing nickel salicidation

CHARTERED SEMICONDUCTOR MFG5 citations74
US6890854B2May 10, 2005

Method and apparatus for performing nickel salicidation

CHARTERED SEMICONDUCTOR MFG11 citations74
US6849928B2Feb 1, 2005

Dual silicon-on-insulator device wafer die

CHARTERED SEMICONDUCTOR MFG6 citations74
US6734072B1May 11, 2004

Method of fabricating a MOSFET device using a spike rapid thermal oxidation procedure

CHARTERED SEMICONDUCTOR MFG9 citations74
US6432797B1Aug 13, 2002

Simplified method to reduce or eliminate STI oxide divots

CHARTERED SEMICONDUCTOR MFG13 citations74
US6103594AAug 15, 2000

Method to form shallow trench isolations

CHARTERED SEMICONDUCTOR MFG10 citations74
US6680239B1Jan 20, 2004

Effective isolation with high aspect ratio shallow trench isolation and oxygen or field implant

CHARTERED SEMICONDUCTOR MFG10 citations73
US6764914B2Jul 20, 2004

Method of forming a high K metallic dielectric layer

CHARTERED SEMICONDUCTOR MFG6 citations72
US6518133B1Feb 11, 2003

Method for fabricating a small dimensional gate with elevated source/drain structures

CHARTERED SEMICONDUCTOR MFG8 citations72
US6492242B1Dec 10, 2002

Method of forming of high K metallic dielectric layer

CHARTERED SEMICONDUCTOR MFG8 citations72
US6380066B1Apr 30, 2002

Methods for eliminating metal corrosion by FSG

CHARTERED SEMICONDUCTOR MFG12 citations71

GLOBALFOUNDRIES SG PTE LTD

9 patents

CHARTERED SEMICONDUCTORS MAUFA

1 patent

UNIV SINGAPORE

1 patent

CHARTERED SEMICONDUCTORS MANUF

1 patent

CHARTERED SEMICONDUCTOR MANFAC

1 patent

Showing the top 50 of 81 patents by PatentIndex Score.