Inventor
SEE ALEX
SG81 patents
⚠️ This page may combine multiple inventors who share the name “SEE ALEX”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CHARTERED SEMICONDUCTOR MFG
37 patentsUS6303418B1Oct 16, 2001
Method of fabricating CMOS devices featuring dual gate structures and a high dielectric constant gate insulator layer
CHARTERED SEMICONDUCTOR MFG374 citations99
US6261935B1Jul 17, 2001
Method of forming contact to polysilicon gate for MOS devices
CHARTERED SEMICONDUCTOR MFG216 citations99
US6406975B1Jun 18, 2002
Method for fabricating an air gap shallow trench isolation (STI) structure
CHARTERED SEMICONDUCTOR MFG84 citations97
US6380106B1Apr 30, 2002
Method for fabricating an air gap metallization scheme that reduces inter-metal capacitance of interconnect structures
CHARTERED SEMICONDUCTOR MFG84 citations97
US6348385B1Feb 19, 2002
Method for a short channel CMOS transistor with small overlay capacitance using in-situ doped spacers with a low dielectric constant
CHARTERED SEMICONDUCTOR MFG128 citations97
US6897118B1May 24, 2005
Method of multiple pulse laser annealing to activate ultra-shallow junctions
CHARTERED SEMICONDUCTOR MFG105 citations96
US6391731B1May 21, 2002
Activating source and drain junctions and extensions using a single laser anneal
CHARTERED SEMICONDUCTOR MFG59 citations96
US6365446B1Apr 2, 2002
Formation of silicided ultra-shallow junctions using implant through metal technology and laser annealing process
CHARTERED SEMICONDUCTOR MFG55 citations96
US6380084B1Apr 30, 2002
Method to form high performance copper damascene interconnects by de-coupling via and metal line filling
CHARTERED SEMICONDUCTOR MFG59 citations94
US7094669B2Aug 22, 2006
Structure and method of liner air gap formation
CHARTERED SEMICONDUCTOR MFG46 citations92
US6624489B2Sep 23, 2003
Formation of silicided shallow junctions using implant through metal technology and laser annealing process
CHARTERED SEMICONDUCTOR MFG25 citations92
US6613652B2Sep 2, 2003
Method for fabricating SOI devices with option of incorporating air-gap feature for better insulation and performance
CHARTERED SEMICONDUCTOR MFG28 citations92
US6387747B1May 14, 2002
Method to fabricate RF inductors with minimum area
CHARTERED SEMICONDUCTOR MFG57 citations92
US6355563B1Mar 12, 2002
Versatile copper-wiring layout design with low-k dielectric integration
CHARTERED SEMICONDUCTOR MFG46 citations92
US6319767B1Nov 20, 2001
Method to eliminate top metal corner shaping during bottom metal patterning for MIM capacitors via plasma ashing and hard masking technique
CHARTERED SEMICONDUCTOR MFG50 citations92
US6204137B1Mar 20, 2001
Method to form transistors and local interconnects using a silicon nitride dummy gate technique
CHARTERED SEMICONDUCTOR MFG44 citations92
US6335253B1Jan 1, 2002
Method to form MOS transistors with shallow junctions using laser annealing
CHARTERED SEMICONDUCTOR MFG49 citations91
US6281082B1Aug 28, 2001
Method to form MOS transistors with a common shallow trench isolation and interlevel dielectric gap fill
CHARTERED SEMICONDUCTOR MFG52 citations90
US6650220B2Nov 18, 2003
Parallel spiral stacked inductor on semiconductor material
CHARTERED SEMICONDUCTOR MFG27 citations89
US6475875B1Nov 5, 2002
Shallow trench isolation elevation uniformity via insertion of a polysilicon etch layer
CHARTERED SEMICONDUCTOR MFG27 citations89
US6391720B1May 21, 2002
Process flow for a performance enhanced MOSFET with self-aligned, recessed channel
CHARTERED SEMICONDUCTOR MFG38 citations87
US6468880B1Oct 22, 2002
Method for fabricating complementary silicon on insulator devices using wafer bonding
CHARTERED SEMICONDUCTOR MFG14 citations84
US6613649B2Sep 2, 2003
Method for buffer STI scheme with a hard mask layer as an oxidation barrier
CHARTERED SEMICONDUCTOR MFG16 citations83
US7585768B2Sep 8, 2009
Combined copper plating method to improve gap fill
CHARTERED SEMICONDUCTOR MFG14 citations82
US6905964B2Jun 14, 2005
Method of fabricating self-aligned metal barriers by atomic layer deposition on the copper layer
CHARTERED SEMICONDUCTOR MFG13 citations80
US6436833B1Aug 20, 2002
Method for pre-STI-CMP planarization using poly-si thermal oxidation
CHARTERED SEMICONDUCTOR MFG15 citations80
US7030451B2Apr 18, 2006
Method and apparatus for performing nickel salicidation
CHARTERED SEMICONDUCTOR MFG5 citations74
US6890854B2May 10, 2005
Method and apparatus for performing nickel salicidation
CHARTERED SEMICONDUCTOR MFG11 citations74
US6849928B2Feb 1, 2005
Dual silicon-on-insulator device wafer die
CHARTERED SEMICONDUCTOR MFG6 citations74
US6734072B1May 11, 2004
Method of fabricating a MOSFET device using a spike rapid thermal oxidation procedure
CHARTERED SEMICONDUCTOR MFG9 citations74
US6432797B1Aug 13, 2002
Simplified method to reduce or eliminate STI oxide divots
CHARTERED SEMICONDUCTOR MFG13 citations74
US6103594AAug 15, 2000
Method to form shallow trench isolations
CHARTERED SEMICONDUCTOR MFG10 citations74
US6680239B1Jan 20, 2004
Effective isolation with high aspect ratio shallow trench isolation and oxygen or field implant
CHARTERED SEMICONDUCTOR MFG10 citations73
US6764914B2Jul 20, 2004
Method of forming a high K metallic dielectric layer
CHARTERED SEMICONDUCTOR MFG6 citations72
US6518133B1Feb 11, 2003
Method for fabricating a small dimensional gate with elevated source/drain structures
CHARTERED SEMICONDUCTOR MFG8 citations72
US6492242B1Dec 10, 2002
Method of forming of high K metallic dielectric layer
CHARTERED SEMICONDUCTOR MFG8 citations72
US6380066B1Apr 30, 2002
Methods for eliminating metal corrosion by FSG
CHARTERED SEMICONDUCTOR MFG12 citations71
GLOBALFOUNDRIES SG PTE LTD
9 patentsUS9543502B2Jan 10, 2017
Small pitch and high density contact array
GLOBALFOUNDRIES SG PTE LTD7 citations84
US9287197B2Mar 15, 2016
Through silicon vias
GLOBALFOUNDRIES SG PTE LTD6 citations84
US7989338B2Aug 2, 2011
Grain boundary blocking for stress migration and electromigration improvement in CU interconnects
GLOBALFOUNDRIES SG PTE LTD8 citations82
US9520371B2Dec 13, 2016
Planar passivation for pads
GLOBALFOUNDRIES SG PTE LTD6 citations73
US9511474B2Dec 6, 2016
CMP head structure with retaining ring
GLOBALFOUNDRIES SG PTE LTD3 citations73
US9242341B2Jan 26, 2016
CMP head structure
GLOBALFOUNDRIES SG PTE LTD3 citations73
US9209275B1Dec 8, 2015
Integrated circuits with memory cells and methods of manufacturing the same
GLOBALFOUNDRIES SG PTE LTD4 citations73
US10608046B2Mar 31, 2020
Integrated two-terminal device with logic device for embedded application
GLOBALFOUNDRIES SG PTE LTD4 citations72
US10446607B2Oct 15, 2019
Integrated two-terminal device with logic device for embedded application
GLOBALFOUNDRIES SG PTE LTD4 citations72
CHARTERED SEMICONDUCTORS MAUFA
1 patentUNIV SINGAPORE
1 patentCHARTERED SEMICONDUCTORS MANUF
1 patentCHARTERED SEMICONDUCTOR MANFAC
1 patentShowing the top 50 of 81 patents by PatentIndex Score.