Inventor

FRONHEISER JODY A

US27 patents

⚠️ This page may combine multiple inventors who share the name “FRONHEISER JODY A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FRONHEISER JODY A

GLOBALFOUNDRIES INC

Methods of forming source/drain regions for a PMOS transistor device with a germanium-containing channel region

Channel cladding last process flow for forming a channel region on a FinFET device

Electrical isolation of FinFET active region by selective oxidation of sacrificial layer

FinFET with insulator under channel

Methods of forming isolated germanium-containing fins for a FinFET semiconductor device

Methods of forming a semiconductor device with a nanowire channel structure by performing an anneal process

Methods of forming embedded source/drain regions on finFET devices

Methods of forming replacement fins for a FinFET device

Methods of forming substantially defect-free, fully-strained silicon-germanium fins for a FinFET semiconductor device

FinFET device including a uniform silicon alloy fin

Methods of forming strained channel regions on FinFET devices by performing a heating process on a heat-expandable material

Methods of forming strained channel regions on FinFET devices

FinFET device including a uniform silicon alloy fin

Methods of forming a vertical transistor device

Electrically insulated fin structure(s) with alternative channel materials and fabrication methods

Electrically insulated fin structure(s) with alternative channel materials and fabrication methods

Channel cladding last process flow for forming a channel region on a FinFET device having a reduced size fin in the channel region

Virtual relaxed substrate on edge-relaxed composite semiconductor pillars

Semiconductor structure with increased space and volume between shaped epitaxial structures

Methods of forming fin isolation regions under tensile-strained fins on FinFET semiconductor devices

Common fabrication of multiple FinFETs with different channel heights

Methods of forming replacement fins for a FinFET device using a targeted thickness for the patterned fin etch mask

Methods of forming doped epitaxial SiGe material on semiconductor devices

Vertical transport field effect transistors

MASZARA WITOLD P

Methods of forming FinFET devices with alternative channel materials

Methods of forming FinFET devices with alternative channel materials

GEN ELECTRIC

Nanostructure arrays and methods for forming same