Inventor
KALTALIOGLU ERDEM
US75 patents
⚠️ This page may combine multiple inventors who share the name “KALTALIOGLU ERDEM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
20 patentsUS6949442B2Sep 27, 2005
Methods of forming MIM capacitors
INFINEON TECHNOLOGIES AG112 citations98
US6730982B2May 4, 2004
FBEOL process for Cu metallizations free from Al-wirebond pads
INFINEON TECHNOLOGIES AG74 citations97
US7871902B2Jan 18, 2011
Crack stop trenches
INFINEON TECHNOLOGIES AG19 citations93
US6613664B2Sep 2, 2003
Barbed vias for electrical and mechanical connection between conductive layers in semiconductor devices
INFINEON TECHNOLOGIES AG95 citations93
US7795615B2Sep 14, 2010
Capacitor integrated in a structure surrounding a die
INFINEON TECHNOLOGIES AG19 citations92
US7626268B2Dec 1, 2009
Support structures for semiconductor devices
INFINEON TECHNOLOGIES AG18 citations92
US7201634B1Apr 10, 2007
Polishing methods and apparatus
INFINEON TECHNOLOGIES AG48 citations92
US7122462B2Oct 17, 2006
Back end interconnect with a shaped interface
INFINEON TECHNOLOGIES AG25 citations92
US7060619B2Jun 13, 2006
Reduction of the shear stress in copper via's in organic interlayer dielectric material
INFINEON TECHNOLOGIES AG39 citations92
US6887783B2May 3, 2005
Bilayer HDP CVD/PE CVD cap in advance BEOL interconnect structures and method thereof
INFINEON TECHNOLOGIES AG26 citations92
US6806579B2Oct 19, 2004
Robust via structure and method
INFINEON TECHNOLOGIES AG29 citations92
US8008750B2Aug 30, 2011
Crack stops for semiconductor devices
INFINEON TECHNOLOGIES AG7 citations84
US6914320B2Jul 5, 2005
Bilayer HDP CVD/PE CVD cap in advanced BEOL interconnect structures and method thereof
INFINEON TECHNOLOGIES AG13 citations83
US6864171B1Mar 8, 2005
Via density rules
INFINEON TECHNOLOGIES AG13 citations80
US7615440B2Nov 10, 2009
Capacitor and method of manufacturing a capacitor
INFINEON TECHNOLOGIES AG7 citations72
US8378439B2Feb 19, 2013
Methods of manufacturing semiconductor devices and structures thereof
INFINEON TECHNOLOGIES AG2 citations63
US8822324B2Sep 2, 2014
Passivated copper chip pads
INFINEON TECHNOLOGIES AG3 citations62
US7843035B2Nov 30, 2010
MIM capacitors with catalytic activation layer
INFINEON TECHNOLOGIES AG1 citations62
US7436016B2Oct 14, 2008
MIM capacitor with a cap layer over the conductive plates
INFINEON TECHNOLOGIES AG3 citations62
US7332812B2Feb 19, 2008
Memory card with connecting portions for connection to an adapter
INFINEON TECHNOLOGIES AG5 citations62
IBM
14 patentsUS7052621B2May 30, 2006
Bilayered metal hardmasks for use in Dual Damascene etch schemes
IBM15 citations92
US6278147B1Aug 21, 2001
On-chip decoupling capacitor with bottom hardmask
IBM19 citations92
US9305879B2Apr 5, 2016
E-fuse with hybrid metallization
IBM9 citations84
US9059170B2Jun 16, 2015
Electronic fuse having a damaged region
IBM12 citations84
US8889491B2Nov 18, 2014
Method of forming electronic fuse line with modified cap
IBM5 citations84
US7241681B2Jul 10, 2007
Bilayered metal hardmasks for use in dual damascene etch schemes
IBM13 citations83
US9741657B2Aug 22, 2017
TSV deep trench capacitor and anti-fuse structure
IBM4 citations73
US9123726B2Sep 1, 2015
Selective local metal cap layer formation for improved electromigration behavior
IBM4 citations73
US9082781B2Jul 14, 2015
Semiconductor article having a zig-zag guard ring and method of forming the same
IBM5 citations73
US9059166B2Jun 16, 2015
Interconnect with hybrid metallization
IBM4 citations73
US7091612B2Aug 15, 2006
Dual damascene structure and method
IBM8 citations73
US6387754B2May 14, 2002
Method of forming an on-chip decoupling capacitor with bottom hardmask
IBM8 citations73
US7125792B2Oct 24, 2006
Dual damascene structure and method
IBM8 citations72
US8906799B1Dec 9, 2014
Random local metal cap layer formation for improved integrated circuit reliability
IBM2 citations63
GLOBALFOUNDRIES INC
6 patentsUS9768065B1Sep 19, 2017
Interconnect structures with variable dopant levels
GLOBALFOUNDRIES INC10 citations84
US9997456B2Jun 12, 2018
Interconnect structure having power rail structure and related method
GLOBALFOUNDRIES INC2 citations73
US9478509B2Oct 25, 2016
Mechanically anchored backside C4 pad
GLOBALFOUNDRIES INC5 citations73
US10770407B2Sep 8, 2020
IC structure with interdigitated conductive elements between metal guard structures
GLOBALFOUNDRIES INC3 citations72
US9947602B2Apr 17, 2018
IC structure integrity sensor having interdigitated conductive elements
GLOBALFOUNDRIES INC4 citations72
US10297546B2May 21, 2019
Interconnect structures for a security application
GLOBALFOUNDRIES INC2 citations69
KALTALIOGLU ERDEM
5 patentsUS8159254B2Apr 17, 2012
Crack sensors for semiconductor devices
KALTALIOGLU ERDEM41 citations94
US8890560B2Nov 18, 2014
Crack sensors for semiconductor devices
KALTALIOGLU ERDEM10 citations84
US8610238B2Dec 17, 2013
Crack stop trenches
KALTALIOGLU ERDEM13 citations84
US8309435B2Nov 13, 2012
Crack stops for semiconductor devices
KALTALIOGLU ERDEM14 citations84
US8748295B2Jun 10, 2014
Pads with different width in a scribe line region and method for manufacturing these pads
KALTALIOGLU ERDEM4 citations72
RIESS PHILIPP
1 patentINFINEON TECHNOLOGIES CORP
1 patentKIM SUNOO
1 patentBECK MICHAEL
1 patentBARTH HANS-JOACHIM
1 patentShowing the top 50 of 75 patents by PatentIndex Score.