Inventor
CHU LI-HSIN
TW27 patents
Patents
27 patentsUS10679889B2Jun 9, 2020
Method for manufacturing semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11195720B2Dec 7, 2021
Method for ion implantation that adjusts a target's tilt angle based on a distribution of ejected ions from a target
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11488993B2Nov 1, 2022
Image sensor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10777591B2Sep 15, 2020
Image sensor device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations71
US9673248B2Jun 6, 2017
Image sensing device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations69
US11587824B2Feb 21, 2023
Method for manufacturing semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11476288B2Oct 18, 2022
Infrared image sensor component manufacturing method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11127625B2Sep 21, 2021
Semiconductor structure and related method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10438838B2Oct 8, 2019
Semiconductor structure and related method
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US9281336B2Mar 8, 2016
Mechanisms for forming backside illuminated image sensor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations62
US12439713B2Oct 7, 2025
Image sensor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12211838B2Jan 28, 2025
Device including MIM capacitor and resistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12051593B2Jul 30, 2024
Method for an ion implantation process employing an ion-collecting device that collects a distribution of ejected ions from a target to correct a tilt angle of the target
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11784199B2Oct 10, 2023
Image sensor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11756955B2Sep 12, 2023
Device including MIM capacitor and resistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11615961B2Mar 28, 2023
Method for ion implantation that adjusts a targets tilt angle based on a distribution of ejected ions from a target
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12191328B2Jan 7, 2025
Photodetector with reduced dark current sensitivity and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US9627249B2Apr 18, 2017
Semiconductor structure and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9620551B2Apr 11, 2017
Mechanisms for forming backside illuminated image sensor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US10553489B2Feb 4, 2020
Partitioned wafer and semiconductor die
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10453881B2Oct 22, 2019
Infrared image sensor component
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9905466B2Feb 27, 2018
Wafer partitioning method and device formed
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9871067B2Jan 16, 2018
Infrared image sensor component
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9691807B2Jun 27, 2017
CMOS image sensor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9287303B1Mar 15, 2016
CMOS image sensor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9524997B1Dec 20, 2016
Semiconductor device having seal ring
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations50
US12364036B2Jul 15, 2025
Germanium-based photodetector with reduced dark current
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48