Inventor

KONSTANTINOV ANDREI

SE47 patents

⚠️ This page may combine multiple inventors who share the name “KONSTANTINOV ANDREI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KONSTANTINOV ANDREI

FAIRCHILD SEMICONDUCTOR

Method of manufacturing a SiC bipolar junction transistor and SiC bipolar junction transistor thereof

Switching circuit and controller circuit

SiC bipolar junction transistor with overgrown emitter

Silicon-carbide trench gate MOSFETs

Avalanche-rugged silicon carbide (SiC) power Schottky rectifier

SiC power device having a high voltage termination

Silicon-carbide trench gate MOSFETs

Configuration of portions of a power device within a silicon carbide crystal

Schottky-barrier device with locally planarized surface and related semiconductor product

Bipolar junction transistor with spacer layer

Avalanche-rugged silicon carbide (SiC) power device

Silicon-carbide trench gate MOSFETs and methods of manufacture

Avalanche-rugged silicon carbide (SiC) power device

Schottky-barrier device and related semiconductor product

Silicon carbide power bipolar devices with deep acceptor doping

Silicon carbide bipolar junction transistor including shielding regions

SEMICONDUCTOR COMPONENTS IND LLC

Silicon carbide field-effect transistors

SiC MOSFET with built-in Schottky diode

Schottky rectifier with surge-current ruggedness

Silicon carbide field-effect transistors

Low turn-on voltage silicon carbide rectifiers

Schottky rectifier with surge-current ruggedness

Schottky rectifier with surge-current ruggedness

Termination structures with reduced dynamic output capacitance loss

Carbon-controlled ohmic contact layer for backside ohmic contact on a silicon carbide power semiconductor device

ABB RESEARCH LTD

Method for fabricating a silicon carbide device

Method for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of highly doped amorphous layer as a source for dopant diffusion into SiC

Method for producing a semiconductor device having a semiconductor layer of SiC

Method for producing a semiconductor device having a semiconductor layer of SiC comprising a masking step

Method for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of a highly doped amorphous layer as a source for dopant diffusion into SiC

Semiconductor device having an insulated gate

IGBT having a vertical channel

Semiconductor device having a passivation layer

CREE INC

Vertical junction field effect transistor having an epitaxial gate

Method of manufacturing a vertical junction field effect transistor having an epitaxial gate

Method of manufacturing silicon carbide self-aligned epitaxial MOSFET for high powered device applications

Grid-UMOSFET with electric field shielding of gate oxide

Silicon carbide self-aligned epitaxial MOSFET for high powered device applications

ACREO AB

Lateral field effect transistor of SiC, a method for production thereof and a use of such a transistor

Field effect transistor of SiC for high temperature application, use of such a transistor and a method for production thereof

High power impatt diode

KONSTANTINOV ANDREI

Short gate high power MOSFET and method of manufacture

Method of manufacturing a SiC bipolar junction transistor and SiC bipolar junction transistor thereof

CREE SWEDEN AB

Lateral field effect transistor and its fabrication comprising a spacer layer above and below the channel layer

Method and device of field effect transistor including a base shorted to a source region

(unassigned)

Method of producing a semiconductor device of SiC

HARRIS CHRISTOPHER

Grid-UMOSFET with electric field shielding of gate oxide