Inventor
STANDAERT THEODORUS EDUARDUS
US28 patents
⚠️ This page may combine multiple inventors who share the name “STANDAERT THEODORUS EDUARDUS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
16 patentsUS9953865B1Apr 24, 2018
Structure and method to improve FAV RIE process margin and electromigration
IBM23 citations94
US9219068B2Dec 22, 2015
FinFET with dielectric isolation by silicon-on-nothing and method of fabrication
IBM5 citations84
US9000522B2Apr 7, 2015
FinFET with dielectric isolation by silicon-on-nothing and method of fabrication
IBM13 citations84
US8946792B2Feb 3, 2015
Dummy fin formation by gas cluster ion beam
IBM12 citations84
US8941156B2Jan 27, 2015
Self-aligned dielectric isolation for FinFET devices
IBM13 citations84
US9780035B1Oct 3, 2017
Structure and method for improved stabilization of cobalt cap and/or cobalt liner in interconnects
IBM10 citations83
US9349838B2May 24, 2016
Semiconductor structure with deep trench thermal conduction
IBM9 citations83
US7488679B2Feb 10, 2009
Interconnect structure and process of making the same
IBM13 citations79
US9666529B2May 30, 2017
Method and structure to reduce the electric field in semiconductor wiring interconnects
IBM4 citations73
US9082873B2Jul 14, 2015
Method and structure for finFET with finely controlled device width
IBM6 citations73
US7776737B2Aug 17, 2010
Reliability of wide interconnects
IBM5 citations63
US7943453B2May 17, 2011
CMOS devices with different metals in gate electrodes using spin on low-k material as hard mask
IBM3 citations58
US10134674B2Nov 20, 2018
Structure and method for improved stabilization of cobalt cap and/or cobalt liner in interconnects
IBM0 citations51
US9331177B2May 3, 2016
Semiconductor structure with deep trench thermal conduction
IBM0 citations51
US9252242B2Feb 2, 2016
Semiconductor structure with deep trench thermal conduction
IBM0 citations51
US8748252B1Jun 10, 2014
Replacement metal gate transistors using bi-layer hardmask
IBM0 citations39
GLOBALFOUNDRIES INC
3 patentsUS9269629B2Feb 23, 2016
Dummy fin formation by gas cluster ion beam
GLOBALFOUNDRIES INC11 citations84
US9478549B2Oct 25, 2016
FinFET with dielectric isolation by silicon-on-nothing and method of fabrication
GLOBALFOUNDRIES INC3 citations73
US9627377B2Apr 18, 2017
Self-aligned dielectric isolation for FinFET devices
GLOBALFOUNDRIES INC0 citations52