Inventor
BOTTINI ROBERTA
IT11 patents
⚠️ This page may combine multiple inventors who share the name “BOTTINI ROBERTA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS SRL
6 patentsUS6268247B1Jul 31, 2001
Memory cell of the EEPROM type having its threshold set by implantation, and fabrication method
ST MICROELECTRONICS SRL26 citations92
US6221717B1Apr 24, 2001
EEPROM memory cell comprising a selection transistor with threshold voltage adjusted by implantation, and related manufacturing process
ST MICROELECTRONICS SRL31 citations92
US6194270B1Feb 27, 2001
Process for the manufacturing of an electrically programmable non-volatile memory device
ST MICROELECTRONICS SRL12 citations73
US6329254B1Dec 11, 2001
Memory cell of the EEPROM type having its threshold adjusted by implantation, and fabrication method
ST MICROELECTRONICS SRL6 citations62
US6548354B2Apr 15, 2003
Process for producing a semiconductor memory device comprising mass-storage memory cells and shielded memory cells for storing reserved information
ST MICROELECTRONICS SRL1 citations51
US6437395B2Aug 20, 2002
Process for the manufacturing of an electrically programmable non-volatile memory device
ST MICROELECTRONICS SRL1 citations51
SGS THOMSON MICROELECTRONICS
5 patentsUS6432762B1Aug 13, 2002
Memory cell for EEPROM devices, and corresponding fabricating process
SGS THOMSON MICROELECTRONICS9 citations73
US5985718ANov 16, 1999
Process for fabricating memory cells with two levels of polysilicon for devices of EEPROM type
SGS THOMSON MICROELECTRONICS12 citations73
US6320219B1Nov 20, 2001
Memory cell for EEPROM devices and corresponding fabricating process
SGS THOMSON MICROELECTRONICS2 citations62
US6097057AAug 1, 2000
Memory cell for EEPROM devices, and corresponding fabricating process
SGS THOMSON MICROELECTRONICS2 citations62
US6080626AJun 27, 2000
Memory cell for EEPROM devices, and corresponding fabricating process
SGS THOMSON MICROELECTRONICS1 citations51