Inventor
SHIIMOTO TSUNENORI
JP25 patents
⚠️ This page may combine multiple inventors who share the name “SHIIMOTO TSUNENORI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SONY CORP
13 patentsUS7599210B2Oct 6, 2009
Nonvolatile memory cell, storage device and nonvolatile logic circuit
SONY CORP26 citations92
US9208872B2Dec 8, 2015
Semiconductor device and information reading method
SONY CORP8 citations84
US7433220B2Oct 7, 2008
Two variable resistance elements being formed into a laminated layer with a common electrode and method of driving the same
SONY CORP13 citations84
US9548112B2Jan 17, 2017
Semiconductor device and information reading method
SONY CORP2 citations73
US10338984B2Jul 2, 2019
Storage control apparatus, storage apparatus, and storage control method
SONY CORP2 citations71
US8369128B2Feb 5, 2013
Storage device and information rerecording method
SONY CORP4 citations63
US8363447B2Jan 29, 2013
Storage device and information recording and verification method
SONY CORP2 citations63
US7583525B2Sep 1, 2009
Method of driving storage device
SONY CORP4 citations62
US7035136B2Apr 25, 2006
Nonvolatile magnetic memory device and method of writing data into tunnel magnetoresistance device in nonvolatile magnetic memory device
SONY CORP4 citations62
US8842463B2Sep 23, 2014
Storage apparatus and operation method for operating the same
SONY CORP1 citations52
US8379430B2Feb 19, 2013
Memory device and method of reading memory device
SONY CORP1 citations52
US7002838B2Feb 21, 2006
Semiconductor storage device
SONY CORP0 citations42
US7292518B2Nov 6, 2007
Apparatus for recording information and apparatus for recording and reproducing information
SONY CORP0 citations41
KITAGAWA MAKOTO
6 patentsUS8144499B2Mar 27, 2012
Variable resistance memory device
KITAGAWA MAKOTO25 citations92
US8570787B2Oct 29, 2013
Storage apparatus and operation method for operating the same
KITAGAWA MAKOTO6 citations84
US8482950B2Jul 9, 2013
Non-volatile semiconductor memory device that changes a load capacitance of a sense node in accordance with a logic value of read information
KITAGAWA MAKOTO12 citations84
US8416602B2Apr 9, 2013
Nonvolatile semiconductor memory device
KITAGAWA MAKOTO13 citations84
US8335117B2Dec 18, 2012
Memory device with inhibit control sections
KITAGAWA MAKOTO6 citations73
US8913416B2Dec 16, 2014
Variable-resistance memory device and its operation method
KITAGAWA MAKOTO2 citations62