Inventor

DOEBLER UWE

DE2 patents

Patents

2 patents

US5780929AJul 14, 1998

Formation of silicided junctions in deep submicron MOSFETS by defect enhanced CoSi2 formation

SIEMENS AG21 citations91

US5344793ASep 6, 1994

Formation of silicided junctions in deep sub-micron MOSFETs by defect enhanced CoSi2 formation

SIEMENS AG33 citations91