P

Inventor

FUJIKURA HAJIME

JP47 patents
⚠️ This page may combine multiple inventors who share the name “FUJIKURA HAJIME”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SUMITOMO CHEMICAL CO

21 patents
US10209203B2Feb 19, 2019

Wafer inspection apparatus and wafer inspection method

SUMITOMO CHEMICAL CO2 citations73
US10472715B2Nov 12, 2019

Nitride semiconductor template, manufacturing method thereof, and epitaxial wafer

SUMITOMO CHEMICAL CO3 citations70
US12378694B2Aug 5, 2025

Nitride crystal, semiconductor laminate, and method for manufacturing nitride crystal

SUMITOMO CHEMICAL CO0 citations62
US12002903B2Jun 4, 2024

Group-III nitride laminated substrate and semiconductor element

SUMITOMO CHEMICAL CO0 citations62
US11908902B2Feb 20, 2024

Group III nitride laminate, semiconductor element, and method for producing group III nitride laminate

SUMITOMO CHEMICAL CO0 citations62
US11631785B2Apr 18, 2023

Group-III nitride laminated substrate and semiconductor light-emitting element

SUMITOMO CHEMICAL CO0 citations62
US11600704B2Mar 7, 2023

Nitride semiconductor laminate, semiconductor device, method of manufacturing nitride semiconductor laminate, method of manufacturing nitride semiconductor free-standing substrate and method of manufacturing semiconductor device

SUMITOMO CHEMICAL CO0 citations62
US11552218B2Jan 10, 2023

Aluminum nitride laminate member and light-emitting device

SUMITOMO CHEMICAL CO0 citations62
US11549196B2Jan 10, 2023

Aluminum nitride laminate member and aluminum nitride layer

SUMITOMO CHEMICAL CO0 citations62
US11522105B2Dec 6, 2022

Nitride semiconductor laminated structure, nitride semiconductor light emitting element, and method for manufacturing nitride semiconductor laminated structure

SUMITOMO CHEMICAL CO0 citations62
US11574809B2Feb 7, 2023

Nitride semiconductor template and nitride semiconductor device

SUMITOMO CHEMICAL CO0 citations61
US12488985B2Dec 2, 2025

Semiconductor laminate and method for manufacturing semiconductor laminate

SUMITOMO CHEMICAL CO0 citations57
US10066292B2Sep 4, 2018

Semiconductor manufacturing device and semiconductor manufacturing method

SUMITOMO CHEMICAL CO0 citations52
US10060047B2Aug 28, 2018

Nitride semiconductor crystal producing method including growing nitride semiconductor crystal over seed crystal substrate

SUMITOMO CHEMICAL CO0 citations52
US10062807B2Aug 28, 2018

Method for manufacturing nitride semiconductor template

SUMITOMO CHEMICAL CO0 citations52
US9812607B2Nov 7, 2017

Method for manufacturing nitride semiconductor template

SUMITOMO CHEMICAL CO0 citations52
US12129572B2Oct 29, 2024

Nitride semiconductor template, method for manufacturing nitride semiconductor template, and method for manufacturing nitride semiconductor free-standing substrate

SUMITOMO CHEMICAL CO0 citations51
US10418241B2Sep 17, 2019

Metal chloride gas generator, hydride vapor phase epitaxy growth apparatus, and nitride semiconductor template

SUMITOMO CHEMICAL CO0 citations51
US10084113B2Sep 25, 2018

Nitride semiconductor template and light emitting element

SUMITOMO CHEMICAL CO1 citations49
US9856562B2Jan 2, 2018

Semiconductor manufacturing device and semiconductor manufacturing method

SUMITOMO CHEMICAL CO0 citations42
US10294566B2May 21, 2019

Substrate processing apparatus and substrate processing method

SUMITOMO CHEMICAL CO0 citations38

HITACHI CABLE

9 patents

FUJIKURA HAJIME

7 patents

SCIOCS CO LTD

7 patents

KONNO TAICHIROO

2 patents

HITACHI METALS LTD

1 patent