Inventor
CHEN SHENG-CHANG
TW25 patents
⚠️ This page may combine multiple inventors who share the name “CHEN SHENG-CHANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
21 patentsUS10825499B2Nov 3, 2020
Magnetic random access memory structure and manufacturing method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10727274B2Jul 28, 2020
Techniques for MRAM top electrode via connection
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10490248B2Nov 26, 2019
Magnetic random access memory structure and manufacturing method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11075335B2Jul 27, 2021
Techniques for MRAM MTJ top electrode connection
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US11551736B2Jan 10, 2023
Semiconductor device and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US11437433B2Sep 6, 2022
Techniques for MRAM top electrode via connection
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11322543B2May 3, 2022
Method for MRAM top electrode connection
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12550619B2Feb 10, 2026
Techniques for MRAM MTJ top electrode connection
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12444650B2Oct 14, 2025
Etch stop layer for memory device formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12426274B2Sep 23, 2025
Method for MRAM top electrode connection
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12426514B2Sep 23, 2025
Techniques for MRAM MTJ top electrode connection
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12342730B2Jun 24, 2025
Magnetic tunnel junction structures with protection outer layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12329039B2Jun 10, 2025
Magnetic tunnel junction structures with protection outer layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12223989B2Feb 11, 2025
Semiconductor device and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12027420B2Jul 2, 2024
Etch stop layer for memory device formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11910619B2Feb 20, 2024
Method for MRAM top electrode connection
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11469269B2Oct 11, 2022
Techniques for MRAM top electrode via connection
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11380580B2Jul 5, 2022
Etch stop layer for memory device formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10991408B2Apr 27, 2021
Magnetic random access memory structure and manufacturing method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12069963B2Aug 20, 2024
Magnetic random access memory device and formation method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10825498B2Nov 3, 2020
Magnetic random access memory structure and manufacturing method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52