P

Inventor

CHEN SHENG-CHANG

TW25 patents
⚠️ This page may combine multiple inventors who share the name “CHEN SHENG-CHANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

21 patents
US10825499B2Nov 3, 2020

Magnetic random access memory structure and manufacturing method of the same

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10727274B2Jul 28, 2020

Techniques for MRAM top electrode via connection

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10490248B2Nov 26, 2019

Magnetic random access memory structure and manufacturing method of the same

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11075335B2Jul 27, 2021

Techniques for MRAM MTJ top electrode connection

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US11551736B2Jan 10, 2023

Semiconductor device and method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US11437433B2Sep 6, 2022

Techniques for MRAM top electrode via connection

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11322543B2May 3, 2022

Method for MRAM top electrode connection

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12550619B2Feb 10, 2026

Techniques for MRAM MTJ top electrode connection

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12444650B2Oct 14, 2025

Etch stop layer for memory device formation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12426274B2Sep 23, 2025

Method for MRAM top electrode connection

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12426514B2Sep 23, 2025

Techniques for MRAM MTJ top electrode connection

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12342730B2Jun 24, 2025

Magnetic tunnel junction structures with protection outer layers

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12329039B2Jun 10, 2025

Magnetic tunnel junction structures with protection outer layers

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12223989B2Feb 11, 2025

Semiconductor device and method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12027420B2Jul 2, 2024

Etch stop layer for memory device formation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11910619B2Feb 20, 2024

Method for MRAM top electrode connection

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11469269B2Oct 11, 2022

Techniques for MRAM top electrode via connection

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11380580B2Jul 5, 2022

Etch stop layer for memory device formation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10991408B2Apr 27, 2021

Magnetic random access memory structure and manufacturing method of the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12069963B2Aug 20, 2024

Magnetic random access memory device and formation method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10825498B2Nov 3, 2020

Magnetic random access memory structure and manufacturing method of the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

CHEN JUI-PIN

1 patent

HSIEH CHIA-MING

1 patent

INST INFORMATION IND

1 patent

MITAC COMPUTING TECH CORP

1 patent