Inventor
BATUDE PERRINE
FR24 patents
⚠️ This page may combine multiple inventors who share the name “BATUDE PERRINE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
COMMISSARIAT ENERGIE ATOMIQUE
17 patentsUS8013399B2Sep 6, 2011
SRAM memory cell having transistors integrated at several levels and the threshold voltage VT of which is dynamically adjustable
COMMISSARIAT ENERGIE ATOMIQUE232 citations98
US11658260B2May 23, 2023
Method of manufacturing an optoelectronic device comprising a plurality of diodes
COMMISSARIAT ENERGIE ATOMIQUE2 citations72
US9966453B2May 8, 2018
Method for doping source and drain regions of a transistor by means of selective amorphisation
COMMISSARIAT ENERGIE ATOMIQUE3 citations71
US9379213B2Jun 28, 2016
Method for forming doped areas under transistor spacers
COMMISSARIAT ENERGIE ATOMIQUE3 citations71
US9343375B2May 17, 2016
Method for manufacturing a transistor in which the strain applied to the channel is increased
COMMISSARIAT ENERGIE ATOMIQUE4 citations71
US9246006B2Jan 26, 2016
Recrystallization of source and drain blocks from above
COMMISSARIAT ENERGIE ATOMIQUE6 citations71
US10170621B2Jan 1, 2019
Method of making a transistor having a source and a drain obtained by recrystallization of semiconductor
COMMISSARIAT ENERGIE ATOMIQUE2 citations67
US10586740B2Mar 10, 2020
Method for manufacturing pairs of CMOS transistors of the “fin-FET” type at low temperatures
COMMISSARIAT ENERGIE ATOMIQUE1 citations60
US11552125B2Jan 10, 2023
Method of manufacturing an optoelectronic device comprising a plurality of diodes and an electronic circuit for controlling these diodes
COMMISSARIAT ENERGIE ATOMIQUE0 citations51
US11139209B2Oct 5, 2021
3D circuit provided with mesa isolation for the ground plane zone
COMMISSARIAT ENERGIE ATOMIQUE0 citations51
US11011425B2May 18, 2021
Production of a 3D circuit with upper level transistor provided with a gate dielectric derived from a substrate transfer
COMMISSARIAT ENERGIE ATOMIQUE0 citations51
US12154930B2Nov 26, 2024
Three-dimensional microelectronic circuit with optimised distribution of its digital and analogue functions
COMMISSARIAT ENERGIE ATOMIQUE0 citations49
US11888007B2Jan 30, 2024
Image sensor formed in sequential 3D technology
COMMISSARIAT ENERGIE ATOMIQUE0 citations44
US10651202B2May 12, 2020
3D circuit transistors with flipped gate
COMMISSARIAT ENERGIE ATOMIQUE0 citations41
US10553702B2Feb 4, 2020
Transistor with controlled overlap of access regions
COMMISSARIAT ENERGIE ATOMIQUE0 citations41
US10497627B2Dec 3, 2019
Method of manufacturing a dopant transistor located vertically on the gate
COMMISSARIAT ENERGIE ATOMIQUE0 citations40
US10319628B2Jun 11, 2019
Integrated circuit having a plurality of active layers and method of fabricating the same
COMMISSARIAT ENERGIE ATOMIQUE0 citations39
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
2 patentsUS9502566B2Nov 22, 2016
Method for producing a field effect transistor including forming a gate after forming the source and drain
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT9 citations83
US9761607B2Sep 12, 2017
Method for producing strained semi-conductor blocks on the insulating layer of a semi-conductor on insulator substrate
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT2 citations72