P

Inventor

BATUDE PERRINE

FR24 patents
⚠️ This page may combine multiple inventors who share the name “BATUDE PERRINE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

COMMISSARIAT ENERGIE ATOMIQUE

17 patents
US8013399B2Sep 6, 2011

SRAM memory cell having transistors integrated at several levels and the threshold voltage VT of which is dynamically adjustable

COMMISSARIAT ENERGIE ATOMIQUE232 citations98
US11658260B2May 23, 2023

Method of manufacturing an optoelectronic device comprising a plurality of diodes

COMMISSARIAT ENERGIE ATOMIQUE2 citations72
US9966453B2May 8, 2018

Method for doping source and drain regions of a transistor by means of selective amorphisation

COMMISSARIAT ENERGIE ATOMIQUE3 citations71
US9379213B2Jun 28, 2016

Method for forming doped areas under transistor spacers

COMMISSARIAT ENERGIE ATOMIQUE3 citations71
US9343375B2May 17, 2016

Method for manufacturing a transistor in which the strain applied to the channel is increased

COMMISSARIAT ENERGIE ATOMIQUE4 citations71
US9246006B2Jan 26, 2016

Recrystallization of source and drain blocks from above

COMMISSARIAT ENERGIE ATOMIQUE6 citations71
US10170621B2Jan 1, 2019

Method of making a transistor having a source and a drain obtained by recrystallization of semiconductor

COMMISSARIAT ENERGIE ATOMIQUE2 citations67
US10586740B2Mar 10, 2020

Method for manufacturing pairs of CMOS transistors of the “fin-FET” type at low temperatures

COMMISSARIAT ENERGIE ATOMIQUE1 citations60
US11552125B2Jan 10, 2023

Method of manufacturing an optoelectronic device comprising a plurality of diodes and an electronic circuit for controlling these diodes

COMMISSARIAT ENERGIE ATOMIQUE0 citations51
US11139209B2Oct 5, 2021

3D circuit provided with mesa isolation for the ground plane zone

COMMISSARIAT ENERGIE ATOMIQUE0 citations51
US11011425B2May 18, 2021

Production of a 3D circuit with upper level transistor provided with a gate dielectric derived from a substrate transfer

COMMISSARIAT ENERGIE ATOMIQUE0 citations51
US12154930B2Nov 26, 2024

Three-dimensional microelectronic circuit with optimised distribution of its digital and analogue functions

COMMISSARIAT ENERGIE ATOMIQUE0 citations49
US11888007B2Jan 30, 2024

Image sensor formed in sequential 3D technology

COMMISSARIAT ENERGIE ATOMIQUE0 citations44
US10651202B2May 12, 2020

3D circuit transistors with flipped gate

COMMISSARIAT ENERGIE ATOMIQUE0 citations41
US10553702B2Feb 4, 2020

Transistor with controlled overlap of access regions

COMMISSARIAT ENERGIE ATOMIQUE0 citations41
US10497627B2Dec 3, 2019

Method of manufacturing a dopant transistor located vertically on the gate

COMMISSARIAT ENERGIE ATOMIQUE0 citations40
US10319628B2Jun 11, 2019

Integrated circuit having a plurality of active layers and method of fabricating the same

COMMISSARIAT ENERGIE ATOMIQUE0 citations39

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

2 patents

ST MICROELECTRONICS SA

2 patents

AUGENDRE EMMANUEL

1 patent

BATUDE PERRINE

1 patent

Commissariat à l'Energie Atomique et aux Energies Alternatives

1 patent