Inventor
TRAN MINH QUOC
US18 patents
⚠️ This page may combine multiple inventors who share the name “TRAN MINH QUOC”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
16 patentsUS6566248B1May 20, 2003
Graphoepitaxial conductor cores in integrated circuit interconnects
ADVANCED MICRO DEVICES INC72 citations96
US6609946B1Aug 26, 2003
Method and system for polishing a semiconductor wafer
ADVANCED MICRO DEVICES INC41 citations92
US7208418B1Apr 24, 2007
Sealing sidewall pores in low-k dielectrics
ADVANCED MICRO DEVICES INC13 citations84
US6425991B1Jul 30, 2002
Plating system with secondary ring anode for a semiconductor wafer
ADVANCED MICRO DEVICES INC14 citations84
US7256499B1Aug 14, 2007
Ultra low dielectric constant integrated circuit system
ADVANCED MICRO DEVICES INC8 citations74
US6583051B2Jun 24, 2003
Method of manufacturing an amorphized barrier layer for integrated circuit interconnects
ADVANCED MICRO DEVICES INC7 citations74
US6348732B1Feb 19, 2002
Amorphized barrier layer for integrated circuit interconnects
ADVANCED MICRO DEVICES INC8 citations74
US6541286B1Apr 1, 2003
Imaging of integrated circuit interconnects
ADVANCED MICRO DEVICES INC12 citations73
US6756300B1Jun 29, 2004
Method for forming dual damascene interconnect structure
ADVANCED MICRO DEVICES INC6 citations63
US6649034B1Nov 18, 2003
Electro-chemical metal alloying for semiconductor manufacturing
ADVANCED MICRO DEVICES INC2 citations63
US6501177B1Dec 31, 2002
Atomic layer barrier layer for integrated circuit interconnects
ADVANCED MICRO DEVICES INC5 citations63
US6455413B1Sep 24, 2002
Pre-fill CMP and electroplating method for integrated circuits
ADVANCED MICRO DEVICES INC3 citations62
US6413390B1Jul 2, 2002
Plating system with remote secondary anode for semiconductor manufacturing
ADVANCED MICRO DEVICES INC4 citations62
US6402909B1Jun 11, 2002
Plating system with shielded secondary anode for semiconductor manufacturing
ADVANCED MICRO DEVICES INC5 citations62
US7001840B1Feb 21, 2006
Interconnect with multiple layers of conductive material with grain boundary between the layers
ADVANCED MICRO DEVICES INC2 citations60
US6504251B1Jan 7, 2003
Heat/cold amorphized barrier layer for integrated circuit interconnects
ADVANCED MICRO DEVICES INC0 citations52