Inventor
KOBAYASHI HEIJI
JP14 patents
⚠️ This page may combine multiple inventors who share the name “KOBAYASHI HEIJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RENESAS TECH CORP
5 patentsUS6998319B2Feb 14, 2006
Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating film
RENESAS TECH CORP33 citations92
US6815265B2Nov 9, 2004
Method of fabricating a semiconductor device with a passivation film
RENESAS TECH CORP8 citations72
US7691713B2Apr 6, 2010
Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating film
RENESAS TECH CORP1 citations62
US6864580B2Mar 8, 2005
Semiconductor device and method of manufacturing the same
RENESAS TECH CORP5 citations54
US7244655B2Jul 17, 2007
Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating film
RENESAS TECH CORP0 citations52
MITSUBISHI ELECTRIC CORP
4 patentsUS5478759ADec 26, 1995
Method of manufacturing semiconductor device with retrograde wells
MITSUBISHI ELECTRIC CORP98 citations96
US6215187B1Apr 10, 2001
Semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP64 citations90
US6229172B1May 8, 2001
Semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP8 citations73
US6483192B1Nov 19, 2002
Semiconductor device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP2 citations62