Inventor
SAPP STEVEN P
US17 patents
⚠️ This page may combine multiple inventors who share the name “SAPP STEVEN P”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FAIRCHILD SEMICONDUCTOR
9 patentsUS7504303B2Mar 17, 2009
Trench-gate field effect transistors and methods of forming the same
FAIRCHILD SEMICONDUCTOR94 citations99
US7982265B2Jul 19, 2011
Trenched shield gate power semiconductor devices and methods of manufacture
FAIRCHILD SEMICONDUCTOR81 citations98
US7345342B2Mar 18, 2008
Power semiconductor devices and methods of manufacture
FAIRCHILD SEMICONDUCTOR402 citations98
US6710418B1Mar 23, 2004
Schottky rectifier with insulation-filled trenches and method of forming the same
FAIRCHILD SEMICONDUCTOR73 citations98
US8043913B2Oct 25, 2011
Method of forming trench-gate field effect transistors
FAIRCHILD SEMICONDUCTOR13 citations92
US7923776B2Apr 12, 2011
Trench-gate field effect transistor with channel enhancement region and methods of forming the same
FAIRCHILD SEMICONDUCTOR19 citations92
US7416948B2Aug 26, 2008
Trench FET with improved body to gate alignment
FAIRCHILD SEMICONDUCTOR30 citations92
US6423623B1Jul 23, 2002
Low Resistance package for semiconductor devices
FAIRCHILD SEMICONDUCTOR78 citations92
US8884365B2Nov 11, 2014
Trench-gate field effect transistor
FAIRCHILD SEMICONDUCTOR4 citations84
NAT SEMICONDUCTOR CORP
4 patentsUS5879994AMar 9, 1999
Self-aligned method of fabricating terrace gate DMOS transistor
NAT SEMICONDUCTOR CORP132 citations97
US4908328AMar 13, 1990
High voltage power IC process
NAT SEMICONDUCTOR CORP85 citations96
US5342797AAug 30, 1994
Method for forming a vertical power MOSFET having doped oxide side wall spacers
NAT SEMICONDUCTOR CORP64 citations89
US6153473ANov 28, 2000
Method of symmetrically implanted punch-through stopper for a rugged DMOS power device
NAT SEMICONDUCTOR CORP14 citations73