Inventor
TOKUDA YASUNORI
JP21 patents
⚠️ This page may combine multiple inventors who share the name “TOKUDA YASUNORI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
20 patentsUS6566734B2May 20, 2003
Semiconductor device
MITSUBISHI ELECTRIC CORP102 citations98
US6617654B2Sep 9, 2003
Semiconductor device with sidewall spacers and elevated source/drain region
MITSUBISHI ELECTRIC CORP28 citations92
US6518635B1Feb 11, 2003
Semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP22 citations92
US5306925AApr 26, 1994
Nonlinear optical element and method of using the same
MITSUBISHI ELECTRIC CORP20 citations92
US6228728B1May 8, 2001
Method of fabricating semiconductor device
MITSUBISHI ELECTRIC CORP35 citations91
US5144397ASep 1, 1992
Light responsive semiconductor device
MITSUBISHI ELECTRIC CORP32 citations91
US4843032AJun 27, 1989
Process for producing a DFB laser with a diffraction grating superlattice
MITSUBISHI ELECTRIC CORP25 citations91
US4817110AMar 28, 1989
Semiconductor laser device
MITSUBISHI ELECTRIC CORP41 citations91
US6635938B1Oct 21, 2003
Semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP19 citations83
US8035130B2Oct 11, 2011
Nitride semiconductor heterojunction field effect transistor having wide band gap barrier layer that includes high concentration impurity region
MITSUBISHI ELECTRIC CORP16 citations82
US4786951ANov 22, 1988
Semiconductor optical element and a process for producing the same
MITSUBISHI ELECTRIC CORP17 citations81
US6624034B2Sep 23, 2003
Method of making field effect transistor in which the increase of parasitic capacitance is restrained by scale reduction
MITSUBISHI ELECTRIC CORP8 citations74
US5285080AFeb 8, 1994
Method of selective light detection
MITSUBISHI ELECTRIC CORP7 citations74
US5539668AJul 23, 1996
Optical switching apparatus
MITSUBISHI ELECTRIC CORP11 citations72
US4788689ANov 29, 1988
Composite resonator-type semiconductor laser device
MITSUBISHI ELECTRIC CORP15 citations72
US5097306AMar 17, 1992
Method of tristable selective light detection with pin diode
MITSUBISHI ELECTRIC CORP2 citations62
US6373108B1Apr 16, 2002
Semiconductor device having reduced sheet resistance of source/drain regions
MITSUBISHI ELECTRIC CORP5 citations61
US7939943B2May 10, 2011
Nitride semiconductor device including an electrode in ohmic contact with a P-type nitride semiconductor contact layer
MITSUBISHI ELECTRIC CORP1 citations52
US7795738B2Sep 14, 2010
Nitride semiconductor device
MITSUBISHI ELECTRIC CORP0 citations52
US7678597B2Mar 16, 2010
Method of manufacturing semiconductor device including gallium-nitride semiconductor structure and a palladium contact
MITSUBISHI ELECTRIC CORP0 citations39