Inventor

PARK SANG JIN

KR172 patents

⚠️ This page may combine multiple inventors who share the name “PARK SANG JIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PARK SANG JIN

SAMSUNG ELECTRONICS CO LTD

Touch detectable display device and driving method thereof

Liquid crystal display with touch sensing using variable capacitor sensor and photosensor

Image display system with light pen

Magnetic random access memory and method of operating the same

Integrated circuit devices having a stress buffer spacer and methods of fabricating the same

Light pen

Light sensing panel, and liquid crystal display apparatus having the same

Hard disk drive adapted to detect free-fall and perform emergency parking of read/write head prior to impact

Magneto-resistive random access memory

Magnetic random access memory with write and read circuits using magnetic tunnel junction (MTJ) devices

Nonvolatile memory device including nano dot and method of fabricating the same

Method of programming memory device

Method of operating nonvolatile memory device

Non-volatile memory cell programming method

Method of forming a vertical diode and method of manufacturing a semiconductor device using the same

Method of programming non-volatile memory device

Magnetic random access memory (MRAM) having a magnetic tunneling junction (MTJ) layer including a tunneling film of uniform thickness and method of manufacturing the same

Nonvolatile memory devices and methods of manufacturing the same

Methods of operating semiconductor memory devices including magnetic films having electrochemical potential difference therebetween

Magnetic resistance device and method of manufacturing the same

Hard disk drive adapted to detect free-fall and perform emergency parking of read/write head prior to impact

Method for manufacturing magneto-resistive random access memory

Method of forming a gate oxide layer in a semiconductor device and method of forming a gate electrode having the same

Magnetic random access memory including middle oxide layer and method of manufacturing the same

Magnetic random access memory (MRAM) for spontaneous hall effect and method of writing and reading data using the MRAM

Method of and apparatus for managing call resources in switching system

Magnetic film structure using spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor device

LEE JEONG-SEOP

Battery

Battery

Battery

MOON DAE-YON

Battery

Battery

Battery

SAMSUNG ELECTRONIC DEVICES

Electron gun for CRT

Electron gun for cathode ray tube

PARK SANG-JIN

Display device and method of driving the same

Light sensing panel, and liquid crystal display apparatus having the same

HYUNDAI MOTOR CO LTD

Rotor cooling structure for induction motor

Apparatus for controlling variable magnetic flux motor

SAMSUNG DISPLAY CO LTD

Display device

Organic light emitting display device

DONG WHA PHARM IND CO LTD

6-methylnicotinamide derivatives as antiviral agents

SK TELECOM CO LTD

Network analyzing method and apparatus for optimal performance of network, and a recording medium having programs to conduct said method

HYUNDAI ELECTRONICS IND

Pipelined fast fourier transform (FFT) processor having convergent block floating point (CBFP) algorithm

KOREA ELECTRONICS TELECOMM

Pre-processing apparatus using nonuniform quantization of channel reliability value and LDPC decoding system using the same

PARK WAN-JUN

Magnetic random access memory and method of reading data from the same

LEE KONG-SOO

Methods of forming integrated circuit devices having vertical semiconductor interconnects and diodes therein and devices formed thereby

UBI SOUND CO LTD

Method and apparatus for pulse width modulation in a switching amplifier

SAMSUNG ELECTRO MECH

Inductor array component and board for mounting the same

CHOI SANG-MOO

Crystalline aluminum oxide layers having increased energy band gap, charge trap layer devices including crystalline aluminum oxide layers, and methods of manufacturing the same